26256
Abstract: smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Text: HM-65262 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced
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HM-65262
70/85ns
HM-65262
26256
smd transistor A13
29103BRA
29109BRA
8413201RA
8413201YA
8413203RA
8413203YA
HM1-65262-9
HM1-65262B-9
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HM-65262
Abstract: No abstract text available
Text: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris
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HM-65262/883
MIL-STD883
HM-65262/883
HM-65262
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ta 6203
Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced
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HM-65262
70/85ns
HM-65262
ta 6203
29103BRA
29109BRA
8413201RA
8413201YA
8413203RA
8413203YA
HM1-65262-9
HM1-65262B-9
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smd transistor A13
Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Text: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced
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HM-65262
70/85ns
HM-65262
smd transistor A13
A9 transistor SMD
29103BRA
29109BRA
8413201RA
8413201YA
8413203RA
8413203YA
HM1-65262-9
HM1-65262B-9
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HM-65262
Abstract: No abstract text available
Text: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max
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HM-65262/883
MIL-STD883
70/85ns
125oC
HM-65262
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HM1-65262
Abstract: HM-65262
Text: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil
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HM-65262/883
MIL-STD883
HM-65262/883
HM1-65262
HM-65262
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8778401
Abstract: 8001601 HI-0201 8GHz transceiver specification MD-80 MD80C88/883 JM38510 HS 3182 HS 3282 MD82c82
Text: Military ICs 12 DIGITAL/MILITARY/SPACE PRODUCT TREES ANALOG Selection Guides Defense Selection Chart Analog Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Arrays, Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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MIL-PRF-38535
1-888-INTERSIL
8778401
8001601
HI-0201
8GHz transceiver specification
MD-80
MD80C88/883
JM38510
HS 3182
HS 3282
MD82c82
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DE3005
Abstract: 1011S Matra-Harris
Text: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 16348 x 1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65262 AND HM65262B ESA/SCC Detail Specification No. 9301/018
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HM65262
HM65262B
DE3005
1011S
Matra-Harris
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Untitled
Abstract: No abstract text available
Text: X H M - 6 5 2 6 2 /8 8 3 16K X 1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access
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Mil-Std-883
70/8SnsMax
HM-65262/883
MIL-STD-1835,
GDIP1-T20
MIL-M38510
CQCC1-N20
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Untitled
Abstract: No abstract text available
Text: HM-65262 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/85ns Max • Low Standby Current. 50^A Max • Low Operating C u rren t. 50mA Max
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HM-65262
70/85ns
HM-65262
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HM165262C-9
Abstract: EG S5N A9 transistor SMD transistor smd hq
Text: Π\ H A R R HM-65262 I S S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts 20 LEAD DIP TOP VIEW Fast Access T im e .7Q/85nsMax
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HM-65262
7Q/85nsMax
HM165262C-9
EG S5N
A9 transistor SMD
transistor smd hq
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hm 6203
Abstract: 841320 J20.C Package rm 6203
Text: HM-65262 HARRIS S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/85ns Max • Low Standby Current. 50|.iA Max
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HM-65262
HM-65262
HM-65262,
hm 6203
841320
J20.C Package
rm 6203
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HM1-65262-9
Abstract: No abstract text available
Text: HARRIS S E M ICON SECTOR f Ì> H U U S E M I C O N D U C T O R A R R MbE D • M3G2271 DD3Tlb7 5 * H A S HM-65262 I S 2 3 - 0 5 1 6 K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Features Fast A ccess T im e . . 70/85nsM ax
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M3G2271
HM-65262
70/85nsM
HM1-65262-9
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Untitled
Abstract: No abstract text available
Text: HM-65262 HARRIS a S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM August 1996 Description Features • Fast Access T im e. 70/85nsM ax • Low Standby C urrent. 50|xA Max
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HM-65262
70/85nsM
HM-65262
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Untitled
Abstract: No abstract text available
Text: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran
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HM-65262/883
MIL-STD883
HM-65262/883
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sxxxx
Abstract: No abstract text available
Text: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP
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HM1-65262/883
Mtl-Std-883
7CV85nsMax
HM-65262/883
MIL-M38510
MIL-STD-1835,
GDIP1-T20
L-M38510
sxxxx
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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Untitled
Abstract: No abstract text available
Text: SB H A R R HM-65262 IS S E MI C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Fast Access T im e .70/85n* Max Low Standby Current. 50nA Max
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HM-65262
70/85n*
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S-80141ALMC notes
Abstract: No abstract text available
Text: H A SEMICOND S E C T O R TS Ï Ë| 4 3 0 5 S 7 1 0 0 1 D 7 S S R R I S 16K x 1 Asynchronous CMOS Static RAM □ HM-65262 HARRIS Pinouts Features TOP VIEW • Low Standby C u rre n t. 50//A
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50//A
4dUdd71
HM-65262
S-80141ALMC notes
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2sc 6200
Abstract: No abstract text available
Text: HM -65262 fH HARRIS S E M I C O N D U C T O R 16K x 1 A s y n c h r o n o u s C M O S Static RAM August 1996 Features Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced SAJI V process. The device utilizes asynchronous circuit
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HM-65262
HM-65262,
2sc 6200
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LH5167-55
Abstract: HM65261S-5 HM65262B HY61C67-35 HY61C67-55 HY61C67-70 HY61C67L-25 HY61C67L-35 16384x1 ram 16384x1
Text: - 36 - 16K A 4 m % a TAAC £ °C (ns) TCAC max (ns) TOE max (ns) •/ TOH min (ns) C MOS S t a t i c RAM (1 6 3 8 4 x 1 ) m f TOD max (ns) TWP min (ns) TDS rein (ns) TDH min (ns) TWD (ns) TWR max (ns) V D D or V C C I DD max (raA) (V) 2 0 P I N À M I )D STANDBY
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16384x1)
HM65261S-5
HMB5262
HM65262B
IM65262C
M5M21C67P-45
M5M21C67P-55
IKK41H6S-20
MK41HBB-25
MK41H66-35
LH5167-55
HY61C67-35
HY61C67-55
HY61C67-70
HY61C67L-25
HY61C67L-35
16384x1 ram
16384x1
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Untitled
Abstract: No abstract text available
Text: ¡2 HM-65262 H A R R IS 16K x 1 Asynchronous CMOS Static RAM Pinouts Features T O P VIEW • Low Standby C u rre n t. 50//A • Low Operating C u rre n t. 50m A
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HM-65262
50//A
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128X128
Abstract: HM-65262 hm65262
Text: HM-65262/883 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran
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HM-65262/883
MIL-STD-883
70/85ns
HM-65262/883
47kil
100kHz
128X128
HM-65262
hm65262
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