100V 11A Search Results

irf530

Abstract: 929E-10 IRF530 fairchild
Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power

MOSFET MARK H1

Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

4431 mosfet

Contextual Info: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

2E12

Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Rad Hard in Fairchild for MOSFET

Contextual Info: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

2E12

Abstract: FRM9140D FRM9140H FRM9140R HI 17741 ua 17741
Contextual Info: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

ta17741

Abstract: 2E12 FRS9140D FRS9140H FRS9140R
Contextual Info: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRM9140D FRM9140H FRM9140R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRS9140D FRS9140H FRS9140R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

IRF9130

Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

irf9130

Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

N170SK

Contextual Info: DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) max 100V 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V • • • • • ID TC = 25°C 12A 11A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

IRF5NJ9540

Contextual Info: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5Y9540CM

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94027A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94038 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94038A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94027 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y9540CM 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y9540CM -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

2E12

Abstract: FSS130R4 JANSR2N7399 T0-257AA
Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

N170SK

Abstract: N170
Contextual Info: DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRO D UC T Product Summary Features V BR DSS RDS(on) max 100V 140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V • • • • • ID T C = +25°C 12A 11A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

transistors ai 585

Contextual Info: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs