1000MM2X0 Search Results

smd transistor 26

Abstract: KTS2005
Contextual Info: IC IC SMD Type Liquid Crystal Display Backlight Drive Applications KTS2005 TSSOP-8 Unit: mm Features Low ON resistance. Ultrahigh-speed switching. Mounting height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit

KTD2005

Contextual Info: IC IC SMD Type Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2

Contextual Info: Ordering number : ENA2243 ECH8697R N-Channel Power MOSFET 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance • 2.5V drive • Common-Drain Type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch

A1324

Abstract: a1324 application note D7010 FTD7010
Contextual Info: FTD7010 Ordering number : ENA1324 SANYO Semiconductors DATA SHEET FTD7010 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • 1.8V drive. Mount heigt 1.1mm. Coposite type, facilitating high-density mounting. Specifications

M2026

Abstract: VGS-50-5 DS2-DC ta2129 FSS206 EN5886A
Contextual Info: Ordering number:EN5886A N-Channel Silicon MOSFET FSS206 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS206] 5 4 0.595 1.27 0.43 0.1 1.5 5.0 1:Source 2:Source 3:Source 4:Gate 5:Drain 6:Drain 7:Drain

D1498TS

Abstract: TA1283 FW213
Contextual Info: Ordering number:EN5908 P-Channel Silicon MOSFET FW213 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW213] 5 4 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2

Contextual Info: TND524VS Ordering number : EN9053 SANYO Semiconductors DATA SHEET TND524VS ExPD Excellent Power Device Single-phase High Side Drive Application Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS

vec8

Contextual Info: SBS811 Ordering number : EN8254A SANYO Semiconductors DATA SHEET SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)

Contextual Info: Ordering number: ENN7004 P-Channel Silicon MOSFET FTS1012 Load Switching Applications Package Dimensions Features • Low ON-resistance. • 4.0V drive. unit : mm 2147 A • M ounting height 1.1mm. [FTS1012] ,0.425 3.0 QM 'J in' Drain Source Source Gate Drain

CPH5862

Contextual Info: CPH5862 注文コード No. N A 0 4 6 4 三洋半導体データシート N CPH5862 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。

Contextual Info: Ordering number : ENA1504A SBS822 Schottky Barrier Diode http://onsemi.com 20V, 1A, Low VF Dual MCPH5 Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

TA-2054

Abstract: 5C22 NTE 2054 D2005 FTD2005
Contextual Info: Ordering number:ENN6429 N-Channel Silicon MOSFET FTD2005 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2005]

tA 1507

Abstract: TA-1507 ta1507 FSS207
Contextual Info: Ordering number:ENN6346 N-Channel Silicon MOSFET FSS207 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. unit:mm 2116 [FSS207] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain

D2017

Abstract: TA-2502 FTD2017
Contextual Info: Ordering number:ENN6361 N-Channel Silicon MOSFET FTD2017 Load Switching Applications Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2017] 3.0 0.65 0.425

FTS1004

Contextual Info: Ordering number:EN5992 P-Channel Silicon MOSFET FTS1004 DC-DC Converter Applications Features Package Dimensions • Low ON Resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147 [FTS1004] 3.0 0.975 0.65 5 1 6.4 0.95 4.5 0.5 0.95 8 4 0.125 0.1 1.0

MS2610

Abstract: D8002 IT07079 7752-2 FTD8002
Contextual Info: FTD8002 注文コード No. N 7 7 5 2 三洋半導体データシート N FTD8002 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・超低オン抵抗。 ・2.5V 駆動。 ・実装高 1.1mm。

77532

Abstract: D8004 FTD8004
Contextual Info: FTD8004 注文コード No. N 7 7 5 3 三洋半導体データシート N FTD8004 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・実装高 1.1mm。 ・ドレイン共通で LIB 用 S / W に最適。

FTS2005

Abstract: S2005
Contextual Info: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4

FTS1001

Abstract: S1001 MOSFET marking YF
Contextual Info: Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS1001] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain

is s106 diode

Abstract: FSS106 S106
Contextual Info: Ordering number:ENN6476 P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS106] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27

FW233

Abstract: W233
Contextual Info: Ordering number : ENN6391 SANYO Semiconductors DATA SHEET FW233 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage

A1930

Abstract: FTD2017C ENA1930 FTD2017
Contextual Info: FTD2017C Ordering number : ENA1930 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FTD2017C General-Purpose Switching Device Applications Features • • • Low ON-resistance Mount heigt 1.1mm Drain common specifications • • • 2.5V drive Composite type, facilitating high-density mounting

"clip bonding"

Abstract: 2SC6022 ECH8101 ECH8102
Contextual Info: T OP I C S 新 版 产 品 话 题 2009年7月17日 推出 低损失双极晶体管: ECH系列 利于配套产品的热对策与小型化! Flat Panel Display 小型封装, Power Loss 55%低减*1 太阳电池 Power Conditioner *1: 截止2009年7月17日, 限于SOT23级别

Contextual Info: Ordering number : ENA1504A SBS822 Schottky Barrier Diode http://onsemi.com 20V, 1A, Low VF Dual MCPH5 Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).