VEC8 Search Results

Contextual Info: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET

Contextual Info: Ordering number : EN8254A SBS811 Schottky Barrier Diode http://onsemi.com 30V, 2A, Low VF, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise

date code Sanyo semiconductor

Abstract: Sanyo date code
Contextual Info: OUTLI NE DRAWING Measure 20/ 1 NTS Mass (g) 0. 015 »For r e f e r e n c e (1 1 ’i'*' ' I u- ' H 05 0 - 0.02 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code VEC8 Dr awn Checked D r a w i n g No. E n a c t No. SANYO S e m i c o n d u c t o r C o . , L t d .

Contextual Info: Ordering number : ENA0666A TND323VD Excellent Power Device http://onsemi.com Inverter and buffer driver for general purpose, Dual VEC8 Features • • • • • • • • Inverter buffer Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured

Contextual Info: Ordering number : EN8699A VEC2315 P-Channel Power MOSFET http://onsemi.com –60V, –2.5A, 137mΩ, Dual VEC8 Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in Halogen free compliance Specifications

Contextual Info: Ordering number : EN8966A SBE812 Schottky Barrier Diode http://onsemi.com 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise

Contextual Info: Ordering number : EN8967A SBE813 Schottky Barrier Diode http://onsemi.com 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise

Contextual Info: Ordering number : EN9053 TND524VS Excellent Power Device http://onsemi.com Single-phase High Side Drive, Single VEC8 Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS

Contextual Info: Ordering number : ENA0520A TND322VD Excellent Power Device http://onsemi.com Dual buffer driver for general purpose, Dual VEC8 Features • • • • • • • • Dual buffer Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured

Contextual Info: Ordering number : ENA1713A VEC2415 N-Channel Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, Dual VEC8 Features • • • • • Low ON-resistance Composite type facilitating high-density mounting 4V drive Mounting high 0.75mm Protection diode in Specifications

Contextual Info: Ordering number : ENA0190A TND321VD Excellent Power Device Dual inverter driver for general purpose, Dual VEC8 http://onsemi.com Features • • • • • • • • Dual inverter Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured

Contextual Info: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

Contextual Info: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

Contextual Info: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L1 Series TMP91C630FG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. Especially, take care below cautions.

Contextual Info: TND322VD Ordering number : ENA0520A SANYO Semiconductors DATA SHEET ExPD Excellent Power Device TND322VD General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications Features • • • •

Contextual Info: TND524VS Ordering number : EN9053 SANYO Semiconductors DATA SHEET TND524VS ExPD Excellent Power Device Single-phase High Side Drive Application Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS

Contextual Info: SBS811 Ordering number : ENN8254 SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Small Switching noise. Low forward voltage (IF=2A, VF max=0.40V).

vec8

Contextual Info: SBS811 Ordering number : EN8254A SANYO Semiconductors DATA SHEET SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)

TIL78

Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

TIL78

Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

diode sy 710

Abstract: VEC2813 N1407
Contextual Info: VEC2813 Ordering number : ENA0384B SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

VEC2811

Abstract: 82871
Contextual Info: VEC2811 Ordering number : ENN8287 VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package