1.0K 250 Search Results

200G

Abstract: WHAR025FE WNAR025FE whc200fe
Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200

7B 100

Abstract: white led 1w 3w 150 resistor resistor 330 Ohm led resistor 330 Ohm DATA SHEET red yellow gold gold resistor resistor 1W resistor 2w 200G led 2w
Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200

wnb4

Abstract: MIL-R-26F ISAOHM
Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200

Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200

Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 L � Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K D d � Dim. L (mm/in) 5.08 / 0.200

Ceramtec 708

Abstract: sumicon 1100 ISAOHM PULSE SPOT-WELDING CNC MACHINE resistor 1W PRECISION 1.0K 250 F 1.0K 250 TO10 package Type Transistors 702
Contextual Info: Miniature Molded Wirewound Resistors WH/WN Series 0.984 / 25 Power Resistance Rating Range Type watts (Ω) WHA 0.5 0.100 - 1.0K WNA 0.100 - 250 WHB 1 0.100 - 4.0K WNB 0.100 - 1.0K WHC 2 0.10 - 8.0K WNC 0.10 - 2.0K L D d Dim. L (mm/in) 5.08 / 0.200 Dim. D

Contextual Info: 603PGA100A Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.0k V(RRM) Max. (V)1.0k I(T) Rated Maximum (A)250² @Temp. (øC) (Test Condition) I(TSM) Max. (A)2.5k @ t(w) (s) (Test Condition) I(GT) Max. (A)1.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current20Â

CLAROSTAT 485

Contextual Info: Model 585 & 586 Consumer 585 DUAL Series 585 Series 586 500 ohm to 2.0 meg ohm 1.0K-ohm to 1.0meg-ohm 500 ohm to 2.0 meg ohm 1.0K-ohm to 1.0meg-ohm RESISTANCE TOLERANCE: +/-20% standard +/-20% standard LINEARITY: through 100K-ohm +/- 5% Independent +/- 5% Independent

Contextual Info: •           Resonance Search LogMag, g 10.0 1.0 Run 1 17/11/2010 10:57:33 HAR SWEN2A 100.0m 10.0 100.0 Hz 1.0K Resonance Search LogMag, g 10.0 1.0 Run 2 17/11/2010 11:08:06 HAR SWEN2A 100.0m 10.0 100.0 Hz 1.0K Resonance Search

Contextual Info: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: IXFH9N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V) I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Contextual Info: IXTH9N100 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)

MCSM1W250RFR

Abstract: tape & reel
Contextual Info: SPC TECHNOLOGY Electrical Specifications Power Rating Maximum Working Watts Voltage @ 70°C 1W 25V Resistance Temperature Coefficient ±100 ppm/°C ± 20 ppm/°C Ohmic Range and Tolerance 0.1%, 0.5%, 1% & 5% 0.01 Ω - 10.0 Ω 1 10.2Ω - 1.0KΩ Power Derating Curve

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

MOSFET 818 ln

Contextual Info: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection

ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

Contextual Info: BUX348APF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)1.0k I(C) Max. (A)35 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)15.0

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / ^DS ON Idss b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K& 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SO T-89. P roduct shipped on 2000 piece c a rrie r tape reels.

BSM15GD100D

Contextual Info: BSM15GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V)20 I(C) Max. (A)15 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.3

Contextual Info: SDF2N100JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55

Contextual Info: STP3N100XI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)1.6# I(DM) Max. (A) Pulsed I(D)1 @Temp (øC)100# IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30# Minimum Operating Temp (øC)

Contextual Info: DTC013Z series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 1.0kΩ 10kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = 1kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of