IXGE75N100Z Search Results

Contextual Info: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

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Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

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Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested