0S35BOS Search Results

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

3A/itas 3-415

Contextual Info: SIEMENS IRM3401/3402/3405/3415 Infrared Data Transceiver Preliminary IRM340S IRM3401 FEATURES • Meets All Applicable IrDA Specifications • IrDA Data Rates Up to 4.0 Mb/s • Wide Dynamic Range • Differential PIN Diode Input for Superior Interference Rejection

Contextual Info: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers SAB 88C166 W Preliminary SAB 88C166(W) 16-Bit Microcontrollers with 32 KByte Flash EPROM • • • • • • • • • • • • • • • • • • • • • High Performance 16-bit CPU with 4-Stage Pipeline

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

siemens t

Contextual Info: SIEMENS TrilithIC B TS 775 P re lim in a ry Data Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Z?DSOn @ 25 °C:

Contextual Info: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß

ILI+2302

Abstract: ILI 2302
Contextual Info: SIEMENS ICs for Com m unications Dual GigaPLL PMB 2302 V1.0 Target Specification • 4.95 fl235b05 0G7fl0fl7 7Tb M PMB 2302 Revision History Previous Releases: Page 4.95 none Subjects changes since last revision Data Classification Maximum Ratings Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible

csi 24c02

Abstract: csi 24C01 24C02 csi 24C01 pin configuration 24C01 24c02 eeprom circuit diagram IC 24C02 24001-S
Contextual Info: • 6 E3 SbG 5 □□TflTMD 7 T T ■ SIEM EN S 1/2 K b it 128/256 x 8 b it S e ria l C M O S E E P R O M s, I 2C S y n c h ro n o u s 2 -W ire B u s , P age P ro te c tio n Mode S L x 2 4C 01/02/P Preliminary Features • Data EEPROM internally organized as

Transistor BFr 99

Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!