08AUG07 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S CM 00 LTR DESCRIPTION R1 SOLDERABILITY SPECIFICATION DWN APVD 08AUG07 KW DC 1 . PARTS '2\ CONTACT IS PLATED OVERALL WITH 0 . 0 0 1 2 7 [ .0 0 0 0 5 0 ] NICKEL, THEN

Contextual Info: 4 TH IS DRAWING IS 4 U N P U B L IS H E D . BY © C O COPYRIGHT RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 - - R E S ER V ED . GP R E V IS IO N S 00 P LTR D E S C R IP TIO N A REVISE PER EC DATE DWN APVD 08AUG07 AZ LL D D WIRING DIAGRAM

mate-n-lok* NYLON

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 00 R E VIS IO N S LTR DESCRIPTION R1 PARTS COMPLY TO AMP 1 & DATE DWN KW DC 08AUG07 ECO—0 7 —01 7257 SOLDERABILITY SPECIFICATION

TSOP343

Abstract: tsop3436 TSOP3438 TSAL6200 TSOP341 TSOP348
Contextual Info: New TSOP341./TSOP343. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP34#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the

1N4148WS-V-GS08

Abstract: 1N4148WS-V-GS18 1N4148 SOD323 1N4148WS-V 1N4148 Fast Switching Diode 1N4148 SOT23 DO35 IMBD4148-V LL4148 1N4148
Contextual Info: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT23 case with the

c 5706

Abstract: AN609 Si8900EDB
Contextual Info: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Transistor 5503

Abstract: AN609
Contextual Info: Si5853BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7009 A 8290

Abstract: SI8901 AN609 Si8901EDB
Contextual Info: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si7909DN
Contextual Info: Si7909DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

qfn 3x3 tray dimension

Abstract: XL1007-QT-0G0T mimix amplifier L1007 XL1007-QT XL1007-QT-0G00 XL1007-QT-EV1
Contextual Info: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise

DM6030HK

Abstract: TS3332LD XP1013 XP1013-BD XP1013-BD-000V XP1013-BD-EV1
Contextual Info: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S R E V IS IO N S 50 RESERVED. LTR D E S C R IP T IO N H2 ECR —07 —01 8635 RED RAW N

1N4148 sod123

Abstract: 1N4148W-V diode sod123 marking 1200 1N4148W SOD123 1N4148 DO35 1N4148 Fast Switching Diode 1N4148 SOT23 1N4148 1N4148W-V-GS18 DO35
Contextual Info: 1N4148W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the e3 MiniMELF case with the type designation LL4148, and the SOT23 case with the

tsop3236

Abstract: IR tsop 20750 TSAL6200 TSOP32 TSOP322 TSOP323 TSOP RECEIVER nec
Contextual Info: New TSOP321./TSOP323. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP32#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the

tsop38 pin diagram

Abstract: TSOP38 TSOP RECEIVER TSOP384 TSOP3830 RC5 IR TSAL6200 TSOP381 TSOP382 rc5 tsop
Contextual Info: New TSOP382./TSOP384. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP38#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 2 3 E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S - R E V IS IO N S RESERVED. C O R P O R A T IO N . 50 AF D E S C R IP T IO N R E VIS E D 1 P ER CONTINUOUS

Contextual Info: 0.25-6.0 GHz High Dynamic Range Amplifier CMM6004-AH August 2007 - Rev 08-Aug-07 Features Functional Block Diagram 0.25 to 6.0 GHz Frequency Range +41 dBm Output IP3 1.7 dB Noise Figure 15 dB Gain +23 dBm P1dB LGA Package Single Power Supply Single Input Matching

34065

Abstract: 4833 AN609 Si8402DB
Contextual Info: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

IN 6650

Abstract: AN609 Si7941DP
Contextual Info: Si7941DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3188

Abstract: Model 8130 mosfet 0018 AN609 Si8407DB 40978
Contextual Info: Si8407DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si7948DP
Contextual Info: Si7948DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 1.5-6.0 GHz GaAs MMIC Packaged Driver Amplifier August 2007 - Rev 08-Aug-07 CMM9000-QT Features 15 dB Gain 15 dBm P1dB 3x3 QFN Package Single Positive Supply 4-8 V, 70 mA Self Bias DC Blocking Capacitors and RF Choke Inductors Integrated On-Chip RoHS Compliant

tsop3236

Abstract: m 81747 TSAL6200 TSOP32 TSOP322 TSOP3256 96 1050
Contextual Info: New TSOP322./TSOP324. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP32#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the