07SEP2010 Search Results

Part Marking STMicroelectronics TSSOP8

Abstract: M95256
Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

DTS-411

Abstract: DTS411 PNP Transistors
Contextual Info: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300

40348

Contextual Info: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation

PNP Transistors

Abstract: "PNP Transistors"
Contextual Info: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes

PNP Transistors

Abstract: MJE1320
Contextual Info: MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type MJE1320 VCEV 1800 hFE 2.5 IC 2 Notes VCEO 900 hFE A 2.0 COB 80 Industry Type

TO206AA

Abstract: hFE-100 2N3700
Contextual Info: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO

DIMENSIONS soic 28

Abstract: 40 PIN CERDIP ADM231
Contextual Info: 5 V-Powered CMOS RS-232 Drivers/Receivers ADM231L–ADM234L/ADM236L–ADM241L FEATURES ADM236L TYPICAL OPERATING CIRCUIT Single 5 V power supply Meets all EIA-232-E and V.28 specifications 120 kbps data rate On-board dc-to-dc converters ±9 V output swing with 5 V supply

Contextual Info: Allied Controls, Inc. : Catalog : Page 3 Allied Controls, Inc. Catalog, Page 2 http://www.alliedcontrols.com/cat03.htm 1 of 2 [07-Sep-2010 9:03:03 AM] Allied Controls, Inc. : Catalog : Page 3 Back to Catalog, or go to page: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

100C

Abstract: 700B SD3932
Contextual Info: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

pseudo-random noise generator i.c

Abstract: an3218 STM32W 1754-3 STM32W108 oqpsk receiver 17543
Contextual Info: AN3218 Application note Adjacent channel rejection measurements for the STM32W108 platform 1 Introduction This application note describes a method which could be used to characterize adjacent channel rejection ACR on RF chips. It also compares different methods used by other

Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes

SFELF10M7FA00-B0

Contextual Info: Search Engine | Murata Manufacturing Search Home > Search Engine > Catalog: SFELF10M7FA00-B0 Filters for Audio Visual Equipment > Ceramic Filters for FM How to check EU RoHS Compliance of Our Products is here. Product Lifecycle Stage in Production Recommended Rank

murata Resonators

Abstract: CSTCE12M0G55-R0
Contextual Info: Search Engine | Murata Manufacturing Search Home > Search Engine > Catalog: CSTCE12M0G55-R0 Resonators > CERALOCK MHz > Part Number How to check EU RoHS Compliance of Our Products is here. Product Lifecycle Stage in Production Recommended Rank Preferred

MM3725

Contextual Info: MM3725 Silicon Transistors - NPN/PNP Medium And High Power Page 1 of 1 Silicon Transistors - NPN/PNP Medium And High Power Contact Factory for complete specification. STI Type MM3725 Tj 200 hFE max 150 fT 200 Notes VCEV hFE A .50 Case Style TO-205AD/TO-39

PNP Transistors

Abstract: TO-205AD 40349
Contextual Info: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation

small signal transistors

Contextual Info: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

3F2 SMD Transistor

Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor

air variable capacitor

Abstract: 100C 200B 700B SD3931-10 VK200 200 pF air variable capacitor
Contextual Info: SD3931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 23 dB gain @ 150 MHz ■ In compliance with the 2002/95/EC European directive Description The SD3931-10 is an N-channel MOS field-effect

Contextual Info: RELEASED BY C O P Y R I G H T 2 009 TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION INTERNATIONAL REVISIONS RIGHTS RESERVED. LTR DESCRIPTION New O +0 .15 DATE Drawing DWN APVD 30AUG2010 C O u n C\J 'SLIDE • i_ i auf der gegenüberliegenden

samsung K9 flash

Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Contextual Info: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming

K9F2G08U0B-PCB0

Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Contextual Info: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●

PNP Transistors

Abstract: hFE-20
Contextual Info: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575