Part Marking STMicroelectronics TSSOP8
Abstract: M95256
Text: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes
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M95256-W
M95256-R
M95256-DR
M95256-DF
256-Kbit
M95256-W
M95256DR
M95256-DF
200-year
Part Marking STMicroelectronics TSSOP8
M95256
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McMaster-Carr
Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
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SD3933
2002/95/EEC
SD3933
McMaster-Carr
m174
92196a
ATC200B
marking h5
92196A1
91252
5050-0037
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DTS-411
Abstract: DTS411 PNP Transistors
Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300
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DTS411
DTS411
O-204AA/TO-3
07-Sep-2010
DTS-411
PNP Transistors
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40348
Abstract: No abstract text available
Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
40348
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PNP Transistors
Abstract: "PNP Transistors"
Text: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes
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2N5320
2N5320
O-205AD/TO-39
07-Sep-2010
PNP Transistors
"PNP Transistors"
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PNP Transistors
Abstract: MJE1320
Text: MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type MJE1320 VCEV 1800 hFE 2.5 IC 2 Notes VCEO 900 hFE A 2.0 COB 80 Industry Type
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MJE1320
MJE1320
O-220AB/TO-220
07-Sep-2010
PNP Transistors
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TO206AA
Abstract: hFE-100 2N3700
Text: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO
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2N3700
2N3700
O-206AA/TO-18
07-Sep-2010
TO206AA
hFE-100
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DIMENSIONS soic 28
Abstract: 40 PIN CERDIP ADM231
Text: 5 V-Powered CMOS RS-232 Drivers/Receivers ADM231L–ADM234L/ADM236L–ADM241L FEATURES ADM236L TYPICAL OPERATING CIRCUIT Single 5 V power supply Meets all EIA-232-E and V.28 specifications 120 kbps data rate On-board dc-to-dc converters ±9 V output swing with 5 V supply
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RS-232
ADM231L
ADM234L/ADM236L
ADM241L
EIA-232-E
ADM236L
interface/rs-232/adm241l/products/product
07-Sep-2010
DIMENSIONS soic 28
40 PIN CERDIP
ADM231
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Untitled
Abstract: No abstract text available
Text: Allied Controls, Inc. : Catalog : Page 3 Allied Controls, Inc. Catalog, Page 2 http://www.alliedcontrols.com/cat03.htm 1 of 2 [07-Sep-2010 9:03:03 AM] Allied Controls, Inc. : Catalog : Page 3 Back to Catalog, or go to page: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
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com/cat03
07-Sep-2010
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100C
Abstract: 700B SD3932
Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description
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SD3932
2002/95/EC
SD3932
100C
700B
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pseudo-random noise generator i.c
Abstract: an3218 STM32W 1754-3 STM32W108 oqpsk receiver 17543
Text: AN3218 Application note Adjacent channel rejection measurements for the STM32W108 platform 1 Introduction This application note describes a method which could be used to characterize adjacent channel rejection ACR on RF chips. It also compares different methods used by other
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AN3218
STM32W108
pseudo-random noise generator i.c
an3218
STM32W
1754-3
oqpsk receiver
17543
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Untitled
Abstract: No abstract text available
Text: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes
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M95256-W
M95256-R
M95256-DR
M95256-DF
256-Kbit
M95256-W
M95256-R
M95256DR
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SFELF10M7FA00-B0
Abstract: No abstract text available
Text: Search Engine | Murata Manufacturing Search Home > Search Engine > Catalog: SFELF10M7FA00-B0 Filters for Audio Visual Equipment > Ceramic Filters for FM How to check EU RoHS Compliance of Our Products is here. Product Lifecycle Stage in Production Recommended Rank
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SFELF10M7FA00-B0
330ohm
30kHz
25kHz
-50kHz
25kHz
50kHz
20kHz
SFELF10M7FA00-B0
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murata Resonators
Abstract: CSTCE12M0G55-R0
Text: Search Engine | Murata Manufacturing Search Home > Search Engine > Catalog: CSTCE12M0G55-R0 Resonators > CERALOCK MHz > Part Number How to check EU RoHS Compliance of Our Products is here. Product Lifecycle Stage in Production Recommended Rank Preferred
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CSTCE12M0G55-R0
000MHz
30ohm
180mm
330mm
murata Resonators
CSTCE12M0G55-R0
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MM3725
Abstract: No abstract text available
Text: MM3725 Silicon Transistors - NPN/PNP Medium And High Power Page 1 of 1 Silicon Transistors - NPN/PNP Medium And High Power Contact Factory for complete specification. STI Type MM3725 Tj 200 hFE max 150 fT 200 Notes VCEV hFE A .50 Case Style TO-205AD/TO-39
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MM3725
O-205AD/TO-39
MM3725
07-Sep-2010
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PNP Transistors
Abstract: TO-205AD 40349
Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation
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O-205AD/TO-39
07-Sep-2010
PNP Transistors
TO-205AD
40349
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small signal transistors
Abstract: No abstract text available
Text: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A
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2N4037
2N4037
O-205AD/TO-39
07-Sep-2010
small signal transistors
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Untitled
Abstract: No abstract text available
Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
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SD3933
2002/95/EEC
SD3933
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3F2 SMD Transistor
Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor
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BFR93A
BFT93.
BFR93A
MSB003
3F2 SMD Transistor
smd code marking rf ft sot23
SMD TRANSISTOR MARKING fq
TRANSISTOR SMD MARKING CODE dk
transistor marking R2p
SMD MARKING CODE TRANSISTOR 501
smd TRANSISTOR code marking VP sot23
bft93 die
st 9335
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air variable capacitor
Abstract: 100C 200B 700B SD3931-10 VK200 200 pF air variable capacitor
Text: SD3931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 23 dB gain @ 150 MHz ■ In compliance with the 2002/95/EC European directive Description The SD3931-10 is an N-channel MOS field-effect
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SD3931-10
2002/95/EC
SD3931-10
SD3931-10y
air variable capacitor
100C
200B
700B
VK200
200 pF air variable capacitor
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samsung K9 flash
Abstract: Samsung EOL 168FBGA samsung nor flash samsung s6 K4X1G163PC-FGC3 k4 MARKING CODE samsung K4 samsung cdram
Text: SAMSUNG's Digital World go contents DRAM ● ● ● ● Computing ❍ DDR3 Products ❍ DDR2 Products ❍ DDR Products ❍ SDRAM Products ❍ System Compatibility ❍ EOL Products Consumer ❍ Products Mobile ❍ Products ❍ EOL Products Graphic & Gaming
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800MHz-40ns
i850E
K4X1G163PC
07-Sep-2010
D18ns
TRP18ns
TRCD18ns
samsung K9 flash
Samsung EOL
168FBGA
samsung nor flash
samsung s6
K4X1G163PC-FGC3
k4 MARKING CODE
samsung K4
samsung cdram
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K9F2G08U0B-PCB0
Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●
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K9F2G08U0B
07-Sep-2010
K9F2G08U0B-PCB0
samsung K9 flash
Toggle DDR NAND flash
K9F2G08U0B-PIB0
samsung 128G nand flash
movinand DECODER
Samsung EOL
K9F2G08U0B-PIB00
samsung toggle mode NAND
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PNP Transistors
Abstract: hFE-20
Text: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575
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2N6575
2N6575
O-204AA/TO-3
07-Sep-2010
PNP Transistors
hFE-20
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Untitled
Abstract: No abstract text available
Text: RELEASED BY C O P Y R I G H T 2 009 TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION INTERNATIONAL REVISIONS RIGHTS RESERVED. LTR DESCRIPTION New O +0 .15 DATE Drawing DWN APVD 30AUG2010 C O u n C\J 'SLIDE • i_ i auf der gegenüberliegenden
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OCR Scan
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30AUG2010
30AUG2010
07SEP2010
RBT-G010
DBT/ASA-G030
O-1300683
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