07JUL03 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC DIST CM 00 REVISIONS P LTR P DESCRIPTION REV PER ECN 0 G 3 B - 0 3 4 9 - 0 3 DATE OWN APVD 07JUL03 SC DB D 0.38 A +-0.25 6.22 [-2 4 5 ] 9.02 [.3 5 5 ] YES YES YES YES YES YES YES YES YES YES YES YES

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST J LTR DWN DATE DESCRIPTION RELEASED FJD0-0230-03 04JUL03 R EVIS ED FJD 0-0235-03 07JUL03 - 1 :$ APVD N.S Y.K N.S Y.K

Si6423DQ

Abstract: Si6423DQ-T1
Contextual Info: Si6423DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0085 @ VGS = - 4.5 V - 9.5 0.0106 @ VGS = - 2.5 V - 8.5 0.014 @ VGS = - 1.8 V - 7.5 APPLICATIONS D Load Switch

Si4427BDY

Abstract: Si4427BDY-T1
Contextual Info: Si4427BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.0105 @ VGS = - 10 V - 12.6 0.0125 @ VGS = - 4.5 V - 11.5 0.0195 @ VGS = - 2.5 V - 9.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S

Si4403BDY

Abstract: Si4403BDY-T1
Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

Si7495DP

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

FTX512K4

Abstract: S12FTX512K4V2
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12FTX512K4V2 Freescale Semiconductor, Inc. FTX512K4 Block Guide V2.0 Draft Original Release Date: 20 JUN 2003 Revised: 14 May 2004 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

Si9410BDY

Abstract: Si9410BDY-T1
Contextual Info: Si9410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY

SI5515DC

Contextual Info: Si5515DC New Product Vishay Siliconix Complementary 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 APPLICATIONS 0.086 @ VGS = - 4.5 V - 4.1 D Load Switching for Portable Devices

Contextual Info: Si7495DP New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

SI7366DP

Contextual Info: Si7366DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Qg Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 20 0.009 @ VGS = 4.5 V 16 APPLICATIONS D Synchronous Rectifier for DC/DC PowerPAKt SO-8

Contextual Info: Si7485DP New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0073 @ VGS = - 4.5 V - 20 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile 0.0090 @ VGS = - 2.5 V

Contextual Info: SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance PRODUCT SUMMARY

40PC150G1AT

Abstract: 40PC015G2A 40pc100g 40PC006G2A
Contextual Info: 40PC SERIES CHART 1 GENERAL CHARACTERISTICS PIN 5 7 PIN 6 PIN 4 7 .520 7 .016 .22 PRESSURE RANGE SEE CHART OVERPRESSURE SEE CHART TEMPERATURE RANGES STORAGE OPERATING 5 SUPPLY VOLTAGE -55 $TO +125 $C -45 $TO +125 $C 5.0 Vdc NOM #.25 Vdc SUPPLY CURRENT 10mA MAX

Contextual Info: SFH692AT VISHAY Vishay Semiconductors Photodarlington Optocoupler, High BVCEO Voltage Miniflat SOP Package Features • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO = 300 V • Low Saturation Voltage

Si5855DC

Abstract: Si5855DC-T1 Si5853DC
Contextual Info: Si5855DC Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible VDS (V) rDS(on) (W) ID (A) 0.110 @ VGS = - 4.5 V - 3.6 - 20

Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

FTX512K4

Abstract: S12XFTX512K4V2
Contextual Info: Freescale Semiconductor, Inc. DOCUMENT NUMBER S12XFTX512K4V2 Freescale Semiconductor, Inc. FTX512K4 Block Guide V2.1 Original Release Date: 20 JUN 2003 Revised: 29 JUN 2004 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its

40PC015V1A

Abstract: 40PC015V2A 40PC100G2A
Contextual Info: LEAD STYLE 1 LEAD PIN OUT Vout GND Vs 3 2 1 - AUTOMOTIVE GRADE T - ENHANCED SOLDER JOINT 40PC O Q_ CD Osi CO CM PRESSURE RANGE 015 - 0 TO 15 PSI 100 - 0 TO 100 PSI 150 - 0 TO 150 PSI 250 - 0 TO 250 PSI 500 - 0 TO 500 PSI 030 - 0 TO 30 PSI 006 - 0 TO 300 mmHg

Si4493DY

Abstract: Si4493DY-T1 S3142
Contextual Info: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7

diode s1

Abstract: 31413 Si7945DP PowerPAK SO-8
Contextual Info: Si7945DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.020 @ VGS = - 10 V - 10.9 0.031 @ VGS = - 4.5 V - 8.8 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package

Contextual Info: Si5855DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = - 4.5 V - 3.6 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible - 20 0.160 @ VGS = - 2.5 V

Contextual Info: Si4500BDY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = - 4.5 V