SI5853DC Search Results

Si5853DC-T1-GE3

Abstract: Si5853DC
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Si5853DC

Contextual Info: SPICE Device Model Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5853DC

Contextual Info: SPICE Device Model Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Si5855DC

Abstract: Si5855DC-T1 Si5853DC
Contextual Info: Si5855DC Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible VDS (V) rDS(on) (W) ID (A) 0.110 @ VGS = - 4.5 V - 3.6 - 20

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5855DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = - 4.5 V - 3.6 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible - 20 0.160 @ VGS = - 2.5 V

vishay MOSFET code marking

Abstract: Si5853DC Si5853DC-T1-GE3
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Si5853DC

Abstract: Si5853DC-T1
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

Si5853DC

Abstract: Si5853DC-T1
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

74000

Abstract: AN609 Si5853DC
Contextual Info: Si5853DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

P-Channel 1.8V MOSFET

Abstract: Si5853DC
Contextual Info: SPICE Device Model Si5853DC P-Channel 1.8-V G-S MOSFET With Schottky Diode Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

Si5853CDC

Abstract: Si5853DC Si5853DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5853CDC vs. Si5853DC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5853CDC-T1-E3 replaces Si5853DC-T1-E3 Si5853CDC-T1-E3 replaces Si5853DC-T1

Si5853DC

Abstract: Si5853DC-T1 marking code vishay SILICONIX
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

Si5853DC

Contextual Info: Si5853DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.110 @ VGS = –4.5 V –3.6 0.160 @ VGS = –2.5 V –3.0 0.240 @ VGS = –1.8 V –2.4 SCHOTTKY PRODUCT SUMMARY

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5853DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.110 @ VGS = –4.5 V –3.6 0.160 @ VGS = –2.5 V –3.0 0.240 @ VGS = –1.8 V –2.4 SCHOTTKY PRODUCT SUMMARY

Marking Code JB

Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5

Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

mosfet marking jb

Abstract: Marking Code JB
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky