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    06N80C3 Search Results

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    06N80C3 Price and Stock

    Infineon Technologies AG SPD06N80C3ATMA1

    MOSFET N-CH 800V 6A TO252-3
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    DigiKey SPD06N80C3ATMA1 Reel 2,500 2,500
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    Avnet Americas SPD06N80C3ATMA1 Reel 52 Weeks 2,500
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    Mouser Electronics SPD06N80C3ATMA1 29,930
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    Newark SPD06N80C3ATMA1 Reel 2,500
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    SPD06N80C3ATMA1 Reel 2,500
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    SPD06N80C3ATMA1 Cut Tape 5
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    Rochester Electronics SPD06N80C3ATMA1 255 1
    • 1 $0.8146
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    Ameya Holding Limited SPD06N80C3ATMA1 10,000
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    Chip One Stop SPD06N80C3ATMA1 Cut Tape 1,798 0 Weeks, 1 Days 1
    • 1 $1.15
    • 10 $0.921
    • 100 $0.895
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    EBV Elektronik SPD06N80C3ATMA1 53 Weeks 2,500
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    Vyrian SPD06N80C3ATMA1 10,918
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    Win Source Electronics SPD06N80C3ATMA1 27,996
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    Infineon Technologies AG SPP06N80C3XK

    MOSFET N-CH 800V 6A TO220-3
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    DigiKey SPP06N80C3XK Tube
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    Avnet Americas SPP06N80C3XK Tube 15 Weeks 500
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    Vyrian SPP06N80C3XK 21,256
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    Infineon Technologies AG SPD06N80C3BTMA1

    MOSFET N-CH 800V 6A TO252-3
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    Chip 1 Exchange SPD06N80C3BTMA1 842
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    EBV Elektronik SPD06N80C3BTMA1 143 Weeks 2,500
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    Vyrian SPD06N80C3BTMA1 1,203
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    Win Source Electronics SPD06N80C3BTMA1 27,996
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    Infineon Technologies AG SPA06N80C3XK

    Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA06N80C3XKSA1)
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    Avnet Americas SPA06N80C3XK Tube 15 Weeks 500
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    Infineon Technologies AG SPA06N80C3

    MOSFETs N-Ch 800V 6A TO220FP-3 CoolMOS C3
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    Mouser Electronics SPA06N80C3 3,194
    • 1 $2.39
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    • 100 $1.3
    • 1000 $0.963
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    TME SPA06N80C3 29 1
    • 1 $1.84
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    • 1000 $1.22
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    ComSIT USA SPA06N80C3 118
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    Component Electronics, Inc SPA06N80C3 1,467
    • 1 $2.31
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    Win Source Electronics SPA06N80C3 9,121
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    Find more 06N80C3 price and stock on Findchips.com

    06N80C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    06n80

    Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C PDF

    06N80C3

    Abstract: 06N80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80 PDF

    diode 71A

    Abstract: SPA06N80C3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated


    Original     		SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3 PDF

    06n80c3

    Abstract: SPA06N80C3
    Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3 PDF

    SMD Transistor g15

    Abstract: transistor A25 SMD transistor SMD g15
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15 PDF

    06n80c3

    Abstract: JESD22 PG-TO220-3 SPA06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPP06N80C3 PG-TO220-3 06N80C3 PDF

    06n80c3

    Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3 PDF

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS PDF

    06n80c3

    Abstract: P-TO252 SPD06N80C3
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3 PDF

    06n80

    Abstract: Q67040-S4352 06n8 06n80c3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated


    Original     		SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3 PDF

    06n80c3

    Abstract: SPP06N80C3 06n80
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3 PDF

    SMD Transistor g15

    Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 PDF

    06N80

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA06N80C3 PG-TO220-3 06N80C3 06N80 PDF

    TO-252

    Abstract: No abstract text available
    Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated


    Original     		SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD06N80C3 PG-TO252-3 06N80C3 PDF

    06N80C3

    Abstract: No abstract text available
    Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPA06N80C3 PG-TO220-3 06N80C3 06N80C3 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    SPD06N80C3

    Abstract: 06N80C3 P-TO252
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated


    Original     		SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252 PDF

    06N80C3

    Abstract: Q67040-S4351 SPP06N80C3
    Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated


    Original     		SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3 PDF

    06N80C3

    Abstract: No abstract text available
    Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06N80C3 PDF