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Infineon Technologies AG SPP06N80C3XK MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XK	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP06N80C3XK		21,256			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD06N80C3BTMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SPD06N80C3BTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Digi-Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip 1 Exchange	SPD06N80C3BTMA1		842			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPD06N80C3BTMA1			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPD06N80C3BTMA1		1,203			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD06N80C3BTMA1		27,996			1 - 10 - 100 $1.5633 1000 $1.0422 10000 $1.0422	Buy Now
Infineon Technologies AG SPD06N80C3ATMA1 Power MOSFET, N Channel, 800 V, 6 A, 0.78 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: SPD06N80C3ATMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPD06N80C3ATMA1	Reel	2,500	52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.64815	Buy Now
	SPD06N80C3ATMA1	Reel	2,500	52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.64815	Buy Now
Mouser Electronics	SPD06N80C3ATMA1		29,815			1 $1.96 10 $1.28 100 $1.06 1000 $0.773 10000 $0.745	Buy Now
Newark ()	SPD06N80C3ATMA1	Cut Tape			5	1 $1.82 10 $1.21 100 $0.995 1000 $0.892 10000 $0.892	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.876	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.844	Buy Now
Rochester Electronics	SPD06N80C3ATMA1		245		1	1 - 10 - 100 $0.9282 1000 $0.7704 10000 $0.6869	Buy Now
Ameya Holding Limited	SPD06N80C3ATMA1		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rutronik	SPD06N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.7283	Buy Now
Chip One Stop	SPD06N80C3ATMA1	Cut Tape	1,798	0 Weeks, 1 Days	1	1 $2.12 10 $1.33 100 $1.04 1000 $0.861 10000 $0.77	Buy Now
EBV Elektronik	SPD06N80C3ATMA1			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPD06N80C3ATMA1		10,918			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD06N80C3ATMA1		27,996			1 - 10 - 100 $1.6032 1000 $1.3026 10000 $1.3026	Buy Now
Infineon Technologies AG SPP06N80C3XKSA1 - Rail/Tube (Alt: SPP06N80C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPP06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.64324 10000 $0.61134	Buy Now
	SPP06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.64324 10000 $0.61134	Buy Now
Mouser Electronics	SPP06N80C3XKSA1		1,124			1 $1.5 10 $1.3 100 $0.833 1000 $0.795 10000 $0.782	Buy Now
Newark	SPP06N80C3XKSA1	Bulk			1	1 $2.59 10 $1.64 100 $1.57 1000 $1.32 10000 $1.32	Buy Now
Rochester Electronics	SPP06N80C3XKSA1		16,358		1	1 - 10 - 100 $0.9961 1000 $0.8268 10000 $0.7371	Buy Now
Ameya Holding Limited	SPP06N80C3XKSA1		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rutronik	SPP06N80C3XKSA1	Tube	50		50	1 - 10 - 100 $0.9465 1000 $0.7572 10000 $0.7302	Buy Now
Chip One Stop	SPP06N80C3XKSA1	Tube	476	0 Weeks, 1 Days	1	1 $1.54 10 $0.902 100 $0.84 1000 $0.729 10000 $0.729	Buy Now
EBV Elektronik	SPP06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP06N80C3XKSA1		4,783			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPP06N80C3XKSA1		3,630			1 - 10 - 100 $2.6198 1000 $2.1972 10000 $2.1972	Buy Now
Infineon Technologies AG SPA06N80C3XKSA1 - Rail/Tube (Alt: SPA06N80C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPA06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.64324 10000 $0.61134	Buy Now
	SPA06N80C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.64324 10000 $0.61134	Buy Now
Mouser Electronics	SPA06N80C3XKSA1		629			1 $1.67 10 $1.53 100 $0.988 1000 $0.807 10000 $0.806	Buy Now
Newark	SPA06N80C3XKSA1	Bulk	131		1	1 $2.2 10 $1.84 100 $1.46 1000 $1.05 10000 $0.962	Buy Now
Rutronik	SPA06N80C3XKSA1	Tube	500		50	1 - 10 - 100 $0.9465 1000 $0.7572 10000 $0.7302	Buy Now
Chip One Stop	SPA06N80C3XKSA1	Tube	197	0 Weeks, 1 Days	1	1 $0.751 10 $0.694 100 $0.603 1000 $0.603 10000 $0.603	Buy Now

EBV Elektronik	SPA06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPA06N80C3XKSA1		1,904			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPA06N80C3XKSA1		9,100			1 - 10 - 100 $1.6424 1000 $1.3344 10000 $1.3344	Buy Now

Find more 06N80C price and stock on Findchips.com

06N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
06n80 Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C	PDF
06N80C3 Abstract: 06N80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80	PDF
diode 71A Abstract: SPA06N80C3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 Contextual Info: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD transistor SMD g15 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15	PDF
06n80c3 Abstract: JESD22 PG-TO220-3 SPA06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3	PDF
06n80c3 Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS	PDF
06n80c3 Abstract: P-TO252 SPD06N80C3 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3	PDF
06n80 Abstract: Q67040-S4352 06n8 06n80c3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3	PDF
06n80c3 Abstract: SPP06N80C3 06n80 Contextual Info: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80	PDF
Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF
Contextual Info: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF

SMD Transistor g15 Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3	PDF
06N80 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80	PDF
TO-252 Contextual Info: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3	PDF
06N80C3 Contextual Info: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80C3	PDF
smd transistor marking 12W Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98 Contextual Info: Preliminary data 06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated	Original	SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
SPD06N80C3 Abstract: 06N80C3 P-TO252 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252	PDF
06N80C3 Abstract: Q67040-S4351 SPP06N80C3 Contextual Info: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated	Original	SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3	PDF

06N80C Search Results

06N80C Price and Stock

Infineon Technologies AG SPP06N80C3XK

Infineon Technologies AG SPD06N80C3BTMA1

Infineon Technologies AG SPD06N80C3ATMA1

Infineon Technologies AG SPP06N80C3XKSA1

Infineon Technologies AG SPA06N80C3XKSA1

06N80C Datasheets Context Search

06n80

06N80C3

diode 71A

06n80c3

SMD Transistor g15

06n80c3

06n80c3

06n80c3

06n80c3

06n80

06n80c3

SMD Transistor g15

06N80

TO-252

PEF 24628

06N80C3

smd transistor marking 12W

BCM 4336

SPD06N80C3

06N80C3