Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4916
Abstract: No abstract text available
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
Si4916DY-T1-E3
Si4916DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4916
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DIODE 0536
Abstract: Si7738 Si7738DP Si7738DP-T1-E3
Text: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested
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Si7738DP
Si7738DP-T1-E3
Si7738DP-T1-GE3
11-Mar-11
DIODE 0536
Si7738
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Untitled
Abstract: No abstract text available
Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available
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Si4866BDY
Si4866BDY-T1-E3
Si4866BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4840BDY
2002/95/EC
Si4840BDY-T1-E3
Si4840BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY VDS V 40 RDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4904DY
Si4904DY-T1-E3
Si4904DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4908DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4908DY
Si4908DY-T1-E3
Si4908DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4900DY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4900DY
Si4900DY-T1-E3
Si4900DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si2305ADS
Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition
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Si2305ADS
O-236
OT-23)
Si2305ADS-T1-E3
Si2305ADS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si3460DV
2002/95/EC
Si3460DV-T1-E3
Si3460DV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4894BDY
Si4894BDY-T1-E3
Si4894BDY-T1-GE3
11-Mar-11
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si4840
Abstract: SI4840BDY-T1-E3 si4840bdy
Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4840BDY
2002/95/EC
Si4840BDY-T1-E3
Si4840BDY-T1-GE3
18-Jul-08
si4840
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Si4916DY-T1-E3
Abstract: TB 9A DIOD
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
18-Jul-08
Si4916DY-T1-E3
TB 9A DIOD
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64895
Abstract: No abstract text available
Text: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR404DP
18-Jul-08
64895
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Si4906DY-T1-E3
Abstract: Si4906DY-T1-GE3 SI4906DY
Text: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4906DY
Si4906DY-T1-E3
Si4906DY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiS436DN
18-Jul-08
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TP0610K-T1
Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K-T1-E3
TP0610K-T1-GE3
2002/95/lectual
18-Jul-08
TP0610K-T1
TP0610K-T1-E3
0533
TP0610K
TP0610K-T1-GE3
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Si4866BDY
Abstract: No abstract text available
Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available
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Si4866BDY
Si4866BDY-T1-E3
Si4866BDY-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Original
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3456BDV
2002/95/EC
Si3456BDV-T1-E3
Si3456BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si7848BDP
2002/95/EC
Si7848BDP-T1-E3
Si7848BDP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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PDF
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Si4894BDY
Si4894BDY-T1-E3
Si4894BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED POR ALL C O P Y R IG H T BY 1T C O E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - REVISIONS RESERVED. GP C O R P O R A T IO N . 00 D E S C R IP T IO N R E VIS E D P ER CR 06APR09 ECO -09-003893
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ECO-09-003893
06APR09
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT 2 3 RELEASED BY 1YCO ELECTRONICS CORPORATION. FOR ALL PUBLIC ATIO N RIGHTS R E S ER V ED . OR R E V IS IO N S 00 P LTR J D E S C R IP TIO N R E V IS E D PER ECO -09-003893 DATE DWN APVD 06APR09 CR CR D
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06APR09
31MAR2000
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