02MAR06 Search Results

Contextual Info: VLMY3214 Vishay Semiconductors Power SMD LED in PLCC-4 Package FEATURES • Utilizing AlInGaP technology OMA* • Angle of half intensity ± ϕ = 60° • Available in 8 mm tape e3 • Luminous intensity and color categorized per packing unit • Luminous intensity ratio per packing unit

AN609

Abstract: Si4368DY
Contextual Info: Si4368DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: DC-DC xppower.com • Single Output • SIP Package • DIP Package • 1000 VDC Isolation • Optional 3000 VDC Isolation • Short Circuit Protection • -40 ºC to +85 ºC Operation Specification Input Voltage 3 Input Input Voltage Range Input Current (no load)

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. ART VW COPYRIGHT - 6 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 2 3 4 - LOC AD ALL RIGHTS RESERVED. REVISIONS DIST 00 P LTR A DESCRIPTION DATE DWN 02MAR2006 ECO — 06 —004480 APVD RB JG G REF t| 0 A1 0 0^

2648

Abstract: 3271 AN609 Si4392ADY
Contextual Info: Si4392ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

475224

Abstract: 6803 AN609 92360 75574n
Contextual Info: Si4814BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: TSOP341.ST1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.ST1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSOP341

Abstract: TSOP34136ST1F
Contextual Info: TSOP341.ST1F Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341.ST1F - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Digital Weighing Scale schematic

Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Contextual Info: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

AN609

Abstract: Si4394DY 7382-1
Contextual Info: Si4394DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Tedea-Huntleigh

Abstract: vishay vt 300 wiring schematic Tedea-Huntleigh 615 TEDEA model 616 Tedea-Huntleigh BY Tedea-Huntleigh BE T4 621
Contextual Info: Models 615 and 616 Vishay Tedea-Huntleigh Tension Compression Load Cells FEATURES • Capacities 50 - 1000kg • Nickel plated alloy steel 615 or stainless steel (616) construction • IP67 protection • For use in tension or compression • 6 wire (sense) circuit

2SA1036K

Abstract: 2SC1623 2SC1623 sot-23 l6 sot23
Contextual Info: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA

ku vsat amplifier

Abstract: CMM1431-SM CMM1434-SM PB-CMM1434-SM
Contextual Info: 13.50-14.50 GHz 2.5-Watt Power Amplifier March 2006 - Rev 02-Mar-06 CMM1434-SM Features 34.5 dBm Typ. Saturated Output Power 31.0 dB (Typ.) Linear Gain Fully Matched Uncondtionally Stable Low-Cost, Surface Mount Package Optimum Thermal Dissipation Applications

2SA1036KR

Abstract: 2SA1036K 2SA1036KQ 2SA1036KP
Contextual Info: 2SA1036K PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -32 V Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -500*

V7-1K24E9

Contextual Info: JG-41241 330 60 t .40 i * •" . 16 5 O t t 2X FO RC E DIFFERENTIAL 225 GRAMS MA X - 2 0 GRAMS MIN .010 MA X TRAVEL O V E R T R A V E L -FREE P O S I T I O N - RELEASE 2 3 4 207406 00 1 8 2 6 4 00 1 9 6 4 4 MA Y BE c H A N G E D BY

AN609

Abstract: Si4836DY
Contextual Info: Si4836DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si4336DY
Contextual Info: Si4336DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si4842DY
Contextual Info: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

dw 084

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC ALL RIGHTS RESERVED. R E V IS IO N S DIST GP 00 LTR A DESCRIPTION DATE RELEASED DWN 02M AR06 APVD RG MP D .50 [12.70 .50 [12.70] 6. FOR TERMINATION REFER TO 1 9 2 6 0 7 9 - 1

CT1-20

Abstract: AN609 Si4378DY 73820
Contextual Info: Si4378DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: TH I S DRAW I NG IS UNPUBL I S H E D . C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS ALL CORPORATIO N FOR P U B L I C A T I ON R IGHTS 20 REV ISIO NS RESERVED. DESCRIPTION R O R E V I S E D PER O G 3 0 - I I 0 0 - 0 4 2 1J1JLY05 R E V I S E D RER E C O - 0 5 - 0 I 0 0 4 5

4437

Abstract: AN609 Si1410EDH
Contextual Info: Si1410EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7361

Abstract: AN609 Si4866DY
Contextual Info: Si4866DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

CT1-20

Abstract: AN609 Si4405DY
Contextual Info: Si4405DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].