SI4368DY Search Results

Si4368DY

Abstract: Si4368DY-T1-E3
Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

AN609

Abstract: Si4368DY
Contextual Info: Si4368DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4368DY

Contextual Info: SPICE Device Model Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching

A2522

Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching

Contextual Info: Si4368DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFETr FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0032 @ VGS = 10 V 25 0.0036 @ VGS = 4.5 V 22 D Extremely Low Qgd WFET Technology for Switching Losses Improvement D TrenchFETr Gen II Power MOSFET

Contextual Info: Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses Improvement

Si4368DY

Abstract: Si4368DY-T1-E3 V3022
Contextual Info: Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses Improvement

Si4368DY

Contextual Info: SPICE Device Model Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching

Si4368DY

Contextual Info: Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFETt FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0032 @ VGS = 10 V 25 0.0036 @ VGS = 4.5 V 22 D Extremely Low Qgd WFET Technology for Switching Losses Improvement D TrenchFETr Gen II Power MOSFET

Si4368DY

Abstract: Si4368DY-T1-E3
Contextual Info: Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Extremely Low Qgd WFET Technology for Switching Losses Improvement

Si4368DY

Contextual Info: SPICE Device Model Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4368DY

Abstract: Si4368DY-T1-E3 V3022
Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Contextual Info: User's Guide SNVA304A – April 2008 – Revised May 2013 AN-1756 LM3481 Evaluation Board 1 Introduction The LM3481 is a current mode, low side N channel FET controller. It can be utilized in numerous configurations including a Boost, Flyback or SEPIC Single Ended Primary Inductor Converter . This

Contextual Info: VISHAY SILICONIX パワー MOSFET Application Note 832 ThermaSim によるビシェイ・シリコニクス・ パワー MOSFET のオンライン熱シミュレーション 執筆者：Kandarp Pandya はじめに ビシェイの新しい ThermaSim ™は製品化までの期間を短縮す

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

RLF12560-7R8N8R2

Abstract: WSL2512R0200FE ECJ-2YB1E124K TPSD107M016R0100 NATIONAL SEMICONDUCTOR catalog 08055C391KAT2A CRCW0805100RFK national semiconductor, product catalog LM3481 LM3481MM
Contextual Info: Introduction The LM3481 is a current mode, low side N channel FET controller. It can be utilized in numerous configurations including a Boost, Flyback or SEPIC Single Ended Primary Inductor Converter . This evaluation board demonstrates the flexibility of the LM3481 in a boost topology. The operating conditions

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no