0269M Search Results

3203 NPN

Abstract: 2SD2116 3203 transistor transistor 3203
Contextual Info: Ordering number: EN 3 2 0 3 No. 3203 _ 2SD2116 NPN Epitaxial P lanar Silicon Transistor General Driver Applications F eatu re s • Darlington connection • High DC current gain •Large current capacity, wide ASO A bsolute M axim um R atin g s a t Ta = 25°C

2SA1689

Contextual Info: Ordering num ber:EN 3 2 3 3 No.3233 _ 2SA1689 PN P E pitaxial P lan ar Silicon T ransistor TV Camera Deflection, High-Voltage Driver Applications F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic

2SC4449

Contextual Info: Ordering number: EN 3241 2SC4449 No.3241 NPN Triple Diffused Planar Silicon Transistor SANYO i TV Camera Deflection, High-Voltage Driver Applications F eatures • High breakdown voltage •Small reverse transfer capacitance and excellent high frequency characteristic

Contextual Info: rdering number: EN3243 2SC4579 No.3243 NPN Triple Diffused Planar Silicon Transistor SMiYO 900V/20mA Switching Applications F eatures . High breakdown voltage •Small c0b • Wide ASO - High reliability Adoption of HVP process A bsolute Maximum R atings atT a= 2 5 e,C

2SC4578

Abstract: EN3242
Contextual Info: Ordering number: EN3242 I No.3242 _ 2SC4578 NPN Triple Diffused P lanar Silicon Transistor 900V/50mA Switching Applications F e a tu re s . High breakdown voltage • Small Cob • Wide ASO • High reliability Adoption of HVP process A bsolute M axim um R atings at Ta = 25°C

25CC

Abstract: 2SB1405
Contextual Info: Ordering number: EN 3236 No.3236 Jl SAMYOi 2SB1405 P N P E p ita x ia l P la n a r Silicon T ra n sis to r General Driver Applications Features • D a rlin g to n connection • H igh DC c u rre n t gain • L arge c u rre n t capacity, wide ASO A b s o lu te M a x im u m R a tin g s a t T a = 25°C

Contextual Info: Ordering number: EN 3 2 3 3 _ 2SA1689 N o.3233 P N P Epitaxial Planar Silicon Transistor SA\YO TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic

2SC4579

Contextual Info: Ordering number: EN3243 _2SC4579 No.3243 N PN Triple Diffused P la n ar Silicon T ransistor 900V/20mA Switching Applications F e a tu r e s . High breakdow n voltage • Sm all c0b •Wide ASO • High reliability Adoption of IiV P process

2SD2120

Contextual Info: Ordering number: EN 3239 2SD2120 No.3239 SA I YO NPN Epitaxial Planar Silicon Transistor i General Driver Applications F eatures •Darlington connection Contains bias resistance, damper diode • High DC current gain *Less dependence of DC current gain on temperature

2SD2117

Contextual Info: Ordering number : EN 3 2 0 4 2SD2117 No.3204 NPN Epitaxial Planar Silicon Transistor General Driver Applications F e a tu re s • Darlington connection •High DC current gain • Large current capacity, wide ASO A bsolute M axim um R atings a t Ta = 25°C

2SC4482

Contextual Info: Ordering num ber: EN 3235 II_2SC4482 No.3235 // NPN Epitaxial Planar Silicon Transistor // High-Current Switching Applications F eatu res • Low saturation voltage • Large current capacity • Fast switching speed A bsolute M axim um R atings at Ta = 25°C

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: Ordering number:EN 3241 i SA1VO No.3241 _ 2SC4449 NPN Triple Diffused Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications i F eatu res • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic

Contextual Info: | Ordering num ber:E N 3235^ _ 2SC4482 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications F e a tu re s •Low saturation voltage • Large current capacity • F ast switching speed A b so lu te M axim um R a tin g s at Ta = 25°C