01APR98 Search Results

Contextual Info: 4 THIS DRAWING C 3 IS U N P U B L IS H E D . COPYRIGHT RELEASED BY AMP 19 INCORPORATED. FOR PUBLICATION A LL RIGHTS 2 ,19 LOG RESERVED. CE D IS T REVISION' 16 LTR D E S C R IP T IO N DATE REVISE PER QAOO —0077 —01 1. DIMENSIONS 2. CONNECTOR IN [ ] ARE

TRANSISTOR SMD MARKING CODE RG

Abstract: TRANSISTOR SMD CODE 6.8 BUK9
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

Zener diode smd marking sot223

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy

45118

Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology

Contextual Info: TEMIC el217X S e m i c o n d u c t o r s 32-kHz Standard Watch C M O S IC Features • 32-kHz oscillator • Integrated capacitors, mask Selectable • 1.3 - 1.8 V operating voltage range • Mask options for pad designation, motor period and motor pulse width

Contextual Info: 4 THIS DRAWING C 3 IS U N P U B L IS H E D . COPYRIGHT 19 RELEASED BY AMP FOR INCORPORATED. A LL PUBLICATION RIGHTS 2 ,19 LOG RESERVED. CE REVISION' D IS T 16 LTR G 1. DIMENSIONS D E S C R IP T IO N REVISE PER QAOO —0284 —01 DATE DWN 60CT01 CK APVD

applications of Transistor BUK 452

Abstract: buk catalog buk9514
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

buk7535

Abstract: BUK753
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

transistor smd marking 187

Abstract: TRANSISTOR SMD MARKING CODE ld BUK7608-55A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTH DESCRIPTION DATE REVISE PER 0 A 0 0 -0 1 3 2 - 0 0 1. DIMENSIONS 15FEB00 OWN APVD CK KC IN [ ] ARE IN INCHES 2. CONNECTOR LOSS: 0 .7 5 d B

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTH DESCRIPTION DATE REVISE PER 0A 0 0-01 0 9 -0 0 04FEB00 OWN APVD CK KC 1. DIMENSIONS IN [ ] ARE IN INCHES D 2. CONNECTOR LOSS: 0.75dB MAX.

PPA-GF30

Abstract: ppagf30 7-966658-5 UJ 99 amp ppa-gf30 hella modu amp hella e2 bosch AMP MODU II
Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG FREI FIJFR VERQFFFFNTLICHUNS COPYRIGHT 19BY AMP INCORPORATED. ^ I S S l ^ S S S u L T F N K o d ie ru n g A -F * ,19-. . ï MATED WITH. PASSEND ZU. M LOC DI5T

PMC91

Abstract: PM431
Contextual Info: CD-ROM Documents Download a current version of this list from our web site New documents are posted on http://www.pmc-sierra.com/docs/cdrom/doclist.pdf http://www.pmc-sierra.com/register/w-new_docs.asp Asynchronous/PDH Document Type Issue QDSX Short Form Data Sheet

Contextual Info: THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTH K DESCRIPTION OWN DATE ADD - 9 7 PER OAQO-0250-00 27MAR00 APVD JWD MK 1. DIMENSIONS IN [ ] ARE IN INCHES 2. CONNECTOR LOSS: 0.5dB MAX.

temic watch ic

Contextual Info: e1217X 32-kHz Standard Watch CMOS IC Features D 32-kHz oscillator D Integrated capacitors, mask selectable D Mask options for pad designation, motor period and D 1.3 - 1.8 V operating voltage range motor pulse width D 180 nA typical current consumption D Voltage regulator

PBYR1025D

Abstract: PBYR10-25d
Contextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1025D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION

BUK9535-55

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has