BUK9 Search Results

BUK9Y14-40B

Contextual Info: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This

BUK9907-55ATE

Contextual Info: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

55A4

Abstract: BUK98150-55A SC-73
Contextual Info: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.

buk9520-100b

Abstract: c774
Contextual Info: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

transistor fet 3884

Abstract: MS-013 SO20 AN10273
Contextual Info: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

BUK9620-100B

Abstract: c778 c776 BUK9620 10S100
Contextual Info: BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high

MIFARE DESFire

Contextual Info: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use

9215055A

Contextual Info: DP AK BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y12-55B Conditions Cth1 4.181E-02 F Cth2 6.609E-03 F Cth3 1.555E-03 F Cth4 3.660E-04 F Cth5 8.612E-05 F Cth6 2.026E-05 F Cth7 4.768E-06 F

Contextual Info: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y40-55B Conditions Cth1 1.131E-02 F Cth2 1.786E-03 F Cth3 4.474E-04 F Cth4 1.121E-04 F Cth5 2.808E-05 F Cth6 7.035E-06 F Cth7 1.763E-06 F

915055

Contextual Info: SO T2 23 BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y11-30B Conditions Cth1 2.589E-02 F Cth2 4.042E-03 F Cth3 9.598E-04 F Cth4 2.279E-04 F Cth5 5.413E-05 F Cth6 1.285E-05 F Cth7 3.053E-06 F

Contextual Info: SO T2 23 BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

buk954r2

Abstract: BUK95 BUK954R2-55B
Contextual Info: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101

BUK92150-55A

Contextual Info: BUK92150-55A N-channel TrenchMOS logic level FET Rev. 04 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK9609-40B

Abstract: BUK95
Contextual Info: BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

D970

Abstract: TRANSISTOR D972 BUK9C10-65BIT d973 BUK9C10 th d970 d787 D972 D976 transistor D973
Contextual Info: BUK9C10-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low

BUK9237-55A

Abstract: buk9237
Contextual Info: BUK9237-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9230-55A

Contextual Info: BUK9230-55A TrenchMOS logic level FET Rev. 02 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9212-55B

Contextual Info: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK98150-55A

Abstract: ID16 SC-73
Contextual Info: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9120-48TC

Abstract: SOT426
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope