00D0317 Search Results

40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Contextual Info: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300

Contextual Info: Surface Mount LED, 0190 bulk & 0198 (tape & reel) Series The 0190 series lamps are miniature chip type designed for surface mounting. These lamps measure approximately 0.8 x l. 6 mm. These lamps are available in EIA481 tape and reel packaging with approximately 2000 pcs per reel. For tape and reel packaging the

4116 DRAM 16Kx1

Abstract: 82C206 82C558
Contextual Info: 82C556/82C557/82C558 Figure 2-3 82C557 SYSC Block Diagram I R ES ET PW RG D CLK ECLK LCLK HA[31:3] BE[7:0]# M /IO # D/C# W /R # /IN V /D IR TYO AD S # BRDY# NA# KEN #/LM EM # EADS#/(W B/W T#) HITM # CACHE# SM IACT# EC D OE# O C D O E# ECAWE#/CACSOO# OCAW E#/CACS1 O#

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Contextual Info: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450

M/MIL-C-39006

Contextual Info: m MATSUO TYPE SOLID-ELECTROLYTE TANTALUM CAPACITORS A O 5 - 2 /-0 s A CAUTIONS 111 •This capacitor is polarized, do not apply reverse voltage. >The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

PS8613

Abstract: MAX293 equivalent NT46 M4125 M41256PP
Contextual Info: ^ m irliO — A T & T MELEC I H C 4 1 2 5 6 x x fi)jO B , FEATURES • 262,144 words x 1-bit organization • Read-Modify-Write capabilities • 100/120/150 ns access tim e from RE • RE Only R efresh/H idden Refresh • 50/60/75 ns access time from CE

26655B

Contextual Info: m * SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO TYPE 122 Non polar type A CAUTIONS • The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please inquire of our Sales Department to confirm specifications prior to use.

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

TL 1074 CT

Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r