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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which


    OCR Scan     		00Bfl47b THM3220C5BS/BSG-60/70 THM3220C5BS/BSG TC5118165BJ 89MAX. THM3220C5BS/BSG 17EHfl PDF

    m2716a

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED


    OCR Scan     		M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W m2716a PDF

    0257S2

    Abstract: No abstract text available
    Text: AMD-K6-III Processor Data Sheet AMD Z\ D i 02575E5 QDLBE72 41fl B 1999 Advanced Micro Devices, Inc. A ll rig h ts reserv ed . The contents of this docum ent are provided in connection w ith A dvanced Micro D evices, Inc. "AMD" products. AMD m akes no representations or w arranties w ith


    OCR Scan     		02575E5 QDLBE72 D257525 21918B/0-October 00bfl5li7 0257S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm


    OCR Scan     		Q62705-K265 fl235b05 00bfl4fl3 KSY44 fl23Sb05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Position Hall Sensor KSY 10 Features • • • • • High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance • Plastic-encapsulated miniature package Typical applications


    OCR Scan     		PX06787 KSY10 R20at OHS0010+ PDF

    m27c2568

    Abstract: m27c2568-25 1N914 M27C256B PDIP28 A13D BA431
    Text: SGS-THOMSON M27C256B HDfgœaLKgTTSQROQ 256K 32K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA - Standby Current 10O^A


    OCR Scan     		M27C256B M27C256B TSOP28 TSOP28 00bfl434 m27c2568 m27c2568-25 1N914 PDIP28 A13D BA431 PDF

    LM6141

    Abstract: 10v regulator 7910 lm814 Ior 4020 transistor 29 amp LM6141wm LM124 LM185 LM614 LM614CN
    Text: LM614A/LM614 NATL SEHICON» LINEAR 22E T> bS01154 □ □bfl'OQ b National Semiconductor 7“- 7 9 - / 0 LM614A/LM614 Quad Operational Amplifiers and Adjustable Reference General Description Features (Guaranteed over temperature & supply) The quad operational amplifiers are a versatile commonmode-to-the-negative-supply ("single supply") type similar


    OCR Scan     		bS01154 LM614A/LM614 LM124 LM185 LM6141 10v regulator 7910 lm814 Ior 4020 transistor 29 amp LM6141wm LM614 LM614CN PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FH 520 Magnetic Fieldprobe Pin configuration 1 - S u p p ly C u r r e n t 2 + H a ll V o lta g e 3 - H a ll V o lta g e 4 + S u p p ly C u rre n t Dimensions in mm Features • High sensitivity • Low TC of sensitivity and internal resistance • Very flat package Kapton-foil with lead strips


    OCR Scan     		0235bGS 00bfl4 Q68000-A8766-F261 053Sb05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCS-THOMSON M2732A m NMOS 32K 4K x 8 UV EPROM • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 35mAmax ■ INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM ■ COMPLETELY STATIC DESCRIPTION


    OCR Scan     		M2732A 200ns 35mAmax M2732A M2732Ais FDIP24W PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KSY13 Position Hall Sensor Features • • • • High sensitivity High operating temperature Low offset voltage Low TC of sensitivity and internal resistance • Plastic miniature package SOT 143 for surface mounting SMT Typical applications • Digital speed sensors


    OCR Scan     		KSY13 Q62705-K209 18-cm 00bfl477 0HSQQQ99 fl23SbD5 00bfl47A PDF

    Hall Siemens

    Abstract: 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor AF03 hall effect sensor spice model Hall Effect 3 pin hall 7a circuit diagram of hall effect hall 4 pin
    Text: SIEM EN S KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low T C of sensitivity Specified T C of offset voltage Low inductive zero component


    OCR Scan     		00bfl4fl3 KSY44 235b05 Hall Siemens 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor AF03 hall effect sensor spice model Hall Effect 3 pin hall 7a circuit diagram of hall effect hall 4 pin PDF

    BC859

    Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C 33E marking marking TN4
    Text: 711002b 001364145 33e? H P H IN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.


    OCR Scan     		00bfi445 BC859 BC860 OT-23 BC860 BC859A BC859B BC859C BC860A BC860B BC860C 33E marking marking TN4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 80C286 HARRIS S E M I C O N D U C T O R High Performance Microprocessor with Memory Management and Protection August 1996 Features Description • Compatible with NMOS 80286 The Harris 80C286 is a static CMOS version of the NMOS 80286 microprocessor. The 80C286 is an advanced, highperformance microprocessor with specially optimized capa­


    OCR Scan     		80C286 80C286 25MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in


    OCR Scan     		MWS5114 1024-Word S5114 MWS5114-3 MWS5114-2 MWS5114-1 PDF