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    Untitled

    Abstract: No abstract text available
    Text: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic


    OCR Scan     		PDF 00V/2A 116VDC

    BUK456-1000B

    Abstract: T0220AB 1000B CHN 150
    Text: PHILIPS INTERNATIONAL b5E D • 7110fl2b QQb4131 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b QQb4131 BUK456-1000B T0220AB 1000B CHN 150

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In


    OCR Scan     		PDF 7110fl2h QQb43 BUK456-1000B T0220AB 7110fi2t. 00b4135