00B34 Search Results

transistor tt 2222

Abstract: 4312 020 36640 BLX39 PHILIPS 4312 amplifier vhf linear pulse power amplifier ferroxcube wideband hf choke TT 2222 npn
Contextual Info: bSE » H 7110fl2fc> 00b34fl7 H31 « P H I N BLX39 PHILIPS IN TERNATIONAL _ H .F./V .H .F. POW ER T R A N S IS T O R N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h .f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is

ic TT 2222

Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
Contextual Info: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.

amplifier blw96

Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Contextual Info: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents

BLX13C

Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
Contextual Info: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

EC900

Abstract: BLW99 2 TMT 15-4
Contextual Info: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.

philips blx15

Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Contextual Info: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

Contextual Info: Œ HS-6617RH Radiation Hardened 2K X 8 OMOS PROM August 1995 Features Pinouts • Total Dose 1 x 10s RAD Si 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 • Latch-Up Free >1 x 1012 RAD (Si)/s • Field Programmable TOP VIEW

iem-871

Abstract: 70116-10 t127b AL6-P SERVICE MANUAL PS3 ic6660f 70116 70116 microprocessor NEC SAG 2003 PD70116
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 7 0 1 1 6 V30 16-BIT MICROPROCESSOR The ¿/PD70116 V30 is a CMOS 16-bit m icroprocessor. The /¿PD70116 has a pow erful instruction set w hich includes b it processing and packed BCD operation and high speed m ultiplication/division instructions,

Eprom B 2716 D

Abstract: NMC27C512AQ250 EPROM NMC27C512A NMC27C256
Contextual Info: NATL SEMICOND MEMORY 31E D bSQUHb QQt i340É PRELIM INARY National Semiconductor '7 '- V ^ - / 3 - 3 7 Features • Clocked sense amps for fast access time down to The NMC27C512A Is a high-speed 512k UV erasable and 150 ns electrically reprogrammable CMOS EPROM, Ideally suited

Contextual Info: SIEMENS Intelligent 221-Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication SLE 4436 Features • 221 bit EEPROM and 16 bit maskprogrammable ROM 104 bit user memory fully compatible with SLE 4406 - 64 bit Identification Area

cn/A/U 237 BG

Abstract: rtd 2660
Contextual Info: /= T S G S -T H O M S O N L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIMINARY DATA MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PRO­ GRAMMABLE TRANSITION TIME 3 to 100ms

Contextual Info: fS Ì HS-6664RH H A F R F R IS S E M I C O N D U C T O R Radiation Hardened 8K X 8 CMOS PROM September 1995 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 105 RAD Si

Contextual Info: L3234 L3235 f Z J SGS-THOMSON * 7 # . IM « iL i( g T M M D ( g § HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS • HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYS­ TEM APPLICATIONS ■ IMPLEMENTS ALL KEY ELEMENTS OF THE

HS-3530RH

Contextual Info: HS-3530RH HARRIS S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout 8 LEAD METAL CAN PACKAGE CAN MIL-STD-1835 MACY1-X8 • R adiatio n E n viro nm en t - N eutron F lu en ce (O ) 5 x 1012 n /c m 2 (E > 10K eV )

PD70116

Abstract: mPD70116 nec 14t t4 PD70116 numeric coprocessor V30 User Manual UPD70116 d70116 IEM-8 B34F TI427
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD70116 V30 16-BIT MICROPROCESSOR The jiPD70116 V30 is a CMOS 16-bit microprocessor. The /¿PD70116 has a powerful instruction set which includes bit processing and packed BCD operation and high speed multiplication/division instructions,

Contextual Info: bSMTfleS M 5 M Q0B34147 MITSUBISHI LSIs Tûfl * 1 1 1 1 1 4 4 1 0 0 B J , L , T P , R T - 5 , - 6 , - 7 , - 8 , - 5 S , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1 - bit dynamic RAMS,

Diode T2D od

Abstract: mab8400 MAB8048 PC10 PC11 PCD33XXA
Contextual Info: Philips Semiconductors Product specification 8-bit telecom microcontrollers PCD33XXA Family CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3

Contextual Info: OßlbßOG Q0b3MEE 472 •* r a ANALOG ID E V IC ES 14-Bit, 65 MSPS Monolithic A/D Converter PRELIMINARY TECHNICAL DATA FEATURES 65 MSPS Guaranteed Sample Rate 40 MSPS Version Available Sampling jitter < 300 fs 100 dB Multi-tone SFDR Single +5V Supply 1.4 W Power Dissipation

nmc9346n

Abstract: NMC9346
Contextual Info: NATL SEMÎCOND MEMORY 3 IE D bS0112b Q O L 34SI 4 NMC9346 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 Is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM

NMC27C512AN

Abstract: NMC27C512ANE250
Contextual Info: NATL SEMICOND MEMORY b S G l l S b DOfc.3412 7 31E I) m National ¿¡A Semiconductor PRELIMINARY ~ 7 -V & ‘ / 3 '< 3 S General Description Features The NMC27C512AN is a high-speed 512k UV one time pro­ grammable CMOS EPROM, Ideally suited for applications

Contextual Info: SIEMENS TV-Stereo Sound TDA 6612-2 Preliminary Data Bipolar IC Features The TDA 6612-2 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled

Contextual Info: n r ; * 7 # . s g s - t h o m [ W s o n « [ L [ I g » M l3 o o o n § L 3 0 9 2 SLIC KIT OPTIMIZED FOR APPLICATIONS WITH BOTH FIRST AND SECOND GENERATION COMBOS PRELIMINARY DATA PROGRAMMABLE DC FEED RESISTANCE AND LIMITING CURRENT (25/40/60mA LOW ON-HOOK POWER DISSIPATION

Contextual Info: HS-65647RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10"12 Errors/Bit-Day

Contextual Info: f f i H A R R HS-65643RH I S S E M I C O N D U C T O R Radiation Hardened 64K X 1 SOS OMOS St3tÌC RAM September 1995 Features Description • 1 . 2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10'12 Errors/Bit-Day