transistor tt 2222
Abstract: 4312 020 36640 BLX39 PHILIPS 4312 amplifier vhf linear pulse power amplifier ferroxcube wideband hf choke TT 2222 npn
Text: bSE » H 7110fl2fc> 00b34fl7 H31 « P H I N BLX39 PHILIPS IN TERNATIONAL _ H .F./V .H .F. POW ER T R A N S IS T O R N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h .f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is
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7110fl2fc>
00b34fl7
BLX39
110-j62
transistor tt 2222
4312 020 36640
BLX39
PHILIPS 4312 amplifier
vhf linear pulse power amplifier
ferroxcube wideband hf choke
TT 2222 npn
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ic TT 2222
Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.
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711005b
00b3432
BLW98
D0b344D
ic TT 2222
transistor tt 2222
philips carbon film resistor
carbon resistor
TT 2222 npn
TT 2222
BLW98
transistor blw98
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amplifier blw96
Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents
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BLW96
7110fl2b
DDb3453
amplifier blw96
BLW96 HF power amplifier
PR37 RESISTOR
BLW96
philips blw96
PHILIPS 4312 amplifier
PR37
RESISTOR pr37
PHILIPS capacitors 0.1 mf
A03414
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BLX13C
Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
Text: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear
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Db34Mcl
BLX13C
711005b
00fci34S7
7Z77839
BLX13C
BY206
PHILIPS 4312 amplifier
philips carbon film resistor
3mss
HF SSB APPLICATIONS RF 28 v
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EC900
Abstract: BLW99 2 TMT 15-4
Text: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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OT-121.
BLW99
711GflSb
EC900
BLW99
2 TMT 15-4
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philips blx15
Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Text: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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7110fl2ti
ODb3471
BLX15
philips blx15
BLX15
Philips Application BLX15
TRANSISTOR blx15
Blx15 philips
4312 020 36640
blx15 push pull
PHILIPS 4312 amplifier
carbon resistor
CIL TRANSISTOR 188
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Untitled
Abstract: No abstract text available
Text: Œ HS-6617RH Radiation Hardened 2K X 8 OMOS PROM August 1995 Features Pinouts • Total Dose 1 x 10s RAD Si 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 • Latch-Up Free >1 x 1012 RAD (Si)/s • Field Programmable TOP VIEW
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HS-6617RH
MIL-STD-1835
CDIP2-T24
HM-6617
100ns
00b3M5S
HS-6617RH
Q0b34Sb
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iem-871
Abstract: 70116-10 t127b AL6-P SERVICE MANUAL PS3 ic6660f 70116 70116 microprocessor NEC SAG 2003 PD70116
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 7 0 1 1 6 V30 16-BIT MICROPROCESSOR The ¿/PD70116 V30 is a CMOS 16-bit m icroprocessor. The /¿PD70116 has a pow erful instruction set w hich includes b it processing and packed BCD operation and high speed m ultiplication/division instructions,
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V30TM
16-BIT
uPD70116
/iPD70116
1PD70116
16-/8-bit
iPD70108
V20TM)
iem-871
70116-10
t127b
AL6-P
SERVICE MANUAL PS3
ic6660f
70116
70116 microprocessor
NEC SAG 2003
PD70116
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Eprom B 2716 D
Abstract: NMC27C512AQ250 EPROM NMC27C512A NMC27C256
Text: NATL SEMICOND MEMORY 31E D bSQUHb QQt i340É PRELIM INARY National Semiconductor '7 '- V ^ - / 3 - 3 7 Features • Clocked sense amps for fast access time down to The NMC27C512A Is a high-speed 512k UV erasable and 150 ns electrically reprogrammable CMOS EPROM, Ideally suited
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NMC27C512A
288-Bit
NMC27C512AQE)
Eprom B 2716 D
NMC27C512AQ250
EPROM NMC27C512A
NMC27C256
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Intelligent 221-Bit EEPROM Counter for > 20000 Units with Security Logic and High Security Authentication SLE 4436 Features • 221 bit EEPROM and 16 bit maskprogrammable ROM 104 bit user memory fully compatible with SLE 4406 - 64 bit Identification Area
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221-Bit
fl235bG5
0Qb345b
0235bOS
Q0b3457
fl53SbD5
00fcj345fl
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PDF
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cn/A/U 237 BG
Abstract: rtd 2660
Text: /= T S G S -T H O M S O N L3037 SUBSCRIBER LINE INTERFACE CIRCUIT PRELIMINARY DATA MONOCHIP SILICON SLIC SUITABLE FOR PUBLIC/PRIVATE APPLICATIONS IMPLEMENTS ALL KEY FEATURES OF THE BORSCHT FUNCTION SOFT BATTERY REVERSAL WITH PRO GRAMMABLE TRANSITION TIME 3 to 100ms
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L3037
100ms)
L3037
L3037T
00L3443
cn/A/U 237 BG
rtd 2660
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PDF
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Untitled
Abstract: No abstract text available
Text: fS Ì HS-6664RH H A F R F R IS S E M I C O N D U C T O R Radiation Hardened 8K X 8 CMOS PROM September 1995 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 105 RAD Si
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HS-6664RH
MIL-STD-1835,
CDIP2-T28
130B371
D0t34ba
HS-6664RH
00b34b^
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PDF
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Untitled
Abstract: No abstract text available
Text: L3234 L3235 f Z J SGS-THOMSON * 7 # . IM « iL i( g T M M D ( g § HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS • HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYS TEM APPLICATIONS ■ IMPLEMENTS ALL KEY ELEMENTS OF THE
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L3234
L3235
L3234
100jlF
10OnF
L3235
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PDF
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HS-3530RH
Abstract: No abstract text available
Text: HS-3530RH HARRIS S E M I C O N D U C T O R Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout 8 LEAD METAL CAN PACKAGE CAN MIL-STD-1835 MACY1-X8 • R adiatio n E n viro nm en t - N eutron F lu en ce (O ) 5 x 1012 n /c m 2 (E > 10K eV )
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HS-3530RH
MIL-STD-1835
100kH
00L3413
HS-3530RH
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PDF
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PD70116
Abstract: mPD70116 nec 14t t4 PD70116 numeric coprocessor V30 User Manual UPD70116 d70116 IEM-8 B34F TI427
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD70116 V30 16-BIT MICROPROCESSOR The jiPD70116 V30 is a CMOS 16-bit microprocessor. The /¿PD70116 has a powerful instruction set which includes bit processing and packed BCD operation and high speed multiplication/division instructions,
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V30TM
16-BIT
uPD70116
PD70116
//PD70116
16-/8-bit
PD70108
V20TM>
mPD70116
nec 14t t4
PD70116 numeric coprocessor
V30 User Manual
d70116
IEM-8
B34F
TI427
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PDF
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Untitled
Abstract: No abstract text available
Text: bSMTfleS M 5 M Q0B34147 MITSUBISHI LSIs Tûfl * 1 1 1 1 1 4 4 1 0 0 B J , L , T P , R T - 5 , - 6 , - 7 , - 8 , - 5 S , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1 - bit dynamic RAMS,
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Q0B34147
4194304-BIT
4194304-WORD
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Diode T2D od
Abstract: mab8400 MAB8048 PC10 PC11 PCD33XXA
Text: Philips Semiconductors Product specification 8-bit telecom microcontrollers PCD33XXA Family CONTENTS 1 INTRODUCTION 2 FEATURES 3 GENERAL DESCRIPTION 4 BLOCK DIAGRAM 5 PINNING INFORMATION 5.1 5.2 Pinning Pin description 6 FUNCTIONAL DESCRIPTION 6.1 6.2 6.3
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PCD33XXA
7110fl5fc,
00S3433
Diode T2D od
mab8400
MAB8048
PC10
PC11
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Untitled
Abstract: No abstract text available
Text: OßlbßOG Q0b3MEE 472 •* r a ANALOG ID E V IC ES 14-Bit, 65 MSPS Monolithic A/D Converter PRELIMINARY TECHNICAL DATA FEATURES 65 MSPS Guaranteed Sample Rate 40 MSPS Version Available Sampling jitter < 300 fs 100 dB Multi-tone SFDR Single +5V Supply 1.4 W Power Dissipation
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14-Bit,
AD9042
AD6640
AD6644
AD6644
0Dk343D
AD6644AST
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PDF
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nmc9346n
Abstract: NMC9346
Text: NATL SEMÎCOND MEMORY 3 IE D bS0112b Q O L 34SI 4 NMC9346 National Semiconductor NMC9346 1024-Bit Serial Electrically Erasable Programmable Memory General Description Features The NMC9346 Is a 1024-bit non-volatile, sequential E2PROM, fabricated using advanced N-channel E2PROM
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bS0112b
NMC9346
NMC9346
1024-Bit
COP400
DQb34flS
nmc9346n
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PDF
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NMC27C512AN
Abstract: NMC27C512ANE250
Text: NATL SEMICOND MEMORY b S G l l S b DOfc.3412 7 31E I) m National ¿¡A Semiconductor PRELIMINARY ~ 7 -V & ‘ / 3 '< 3 S General Description Features The NMC27C512AN is a high-speed 512k UV one time pro grammable CMOS EPROM, Ideally suited for applications
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NMC27C512AN
288-Bit
28-pln
32-Lead
NMC27
512AV
NMC27C512ANE250
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS TV-Stereo Sound TDA 6612-2 Preliminary Data Bipolar IC Features The TDA 6612-2 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled
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Q67000-A5ge)
fl235b05
P-DSO-28
6235bQ5
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PDF
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Untitled
Abstract: No abstract text available
Text: n r ; * 7 # . s g s - t h o m [ W s o n « [ L [ I g » M l3 o o o n § L 3 0 9 2 SLIC KIT OPTIMIZED FOR APPLICATIONS WITH BOTH FIRST AND SECOND GENERATION COMBOS PRELIMINARY DATA PROGRAMMABLE DC FEED RESISTANCE AND LIMITING CURRENT (25/40/60mA LOW ON-HOOK POWER DISSIPATION
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25/40/60mA)
00b34b1
L3000N
L3092
100nF
L3092
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PDF
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Untitled
Abstract: No abstract text available
Text: HS-65647RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 SOS CMOS Static RAM August 1995 Features Functional Diagram • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10"12 Errors/Bit-Day
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HS-65647RH
100mA
038mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: f f i H A R R HS-65643RH I S S E M I C O N D U C T O R Radiation Hardened 64K X 1 SOS OMOS St3tÌC RAM September 1995 Features Description • 1 . 2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD Si - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10'12 Errors/Bit-Day
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HS-65643RH
HS-65643RH
038mm)
43D2271
00b342fl
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PDF
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