0073B Search Results

SIEMENS BST h 05 90

Abstract: 51214X SIEMENS BST N 35 SIEMENS BST g 02 60
Contextual Info: SIEMENS Bl Dl Transceiver Optical Module 1300/1300 nm, Medium Power SBM 51214X • • • • • • Designed for application in passive-optical networks Integrated beam splitter Bidirectional Transmission in one optical window Laser diode with Multi-Quantum Well structure

51004G

Abstract: 51005X
Contextual Info: SIEMENS 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power S TL 51004X S T L 51005X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Weil structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

diode 1314

Abstract: 1300 laser diode rise time
Contextual Info: SIEMENS 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power Half Duplex Operation STL 51704X STL 51705X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s

Contextual Info: r z A 7 S G 7 # e S -T H R O M S O N H J S r a O M iS I S T T B 5 0 6 D /F TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE M AIN PRODUCTS CHARACTERISTICS If av> 5A V rrm 600V trr (typ 45ns V f (max) 1.3V K- FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

aba diode

Contextual Info: /IT SGS-THOMSON ^ 7 # IR L IÈ T I® « ® S TTB 106U TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 1A V rrm 600V trr (typ) 45ns Vf PRELIMINARY DATASHEET 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1

RXMH-2

Abstract: two relay stabilizer circuit diagram 3 relay voltage stabilizer 1MRK001 RXKL1 automatic changeover switch circuit diagram for generator rxmh2 ABB RXsf1 RK 411 RK411
Contextual Info: il II II A D V R X EG 21 and R A EG 1MRK 509 011-BEN Voltage relay and protection assemblies February 1997 Changed since November 1995 Data subject to change without notice ABB Network Partner S E 9 4 07 13 Features • Single- and three-phase versions for over- or

Contextual Info: DS9637A & National Semiconductor DS9637A Dual Differential Line Receiver General Description Features The DS9637A is a Schottky dual differential line receiver which has been specifically designed to satisfy the require­ ments of EIA Standards RS-422 and RS-423. In addition,

76A SOD

Contextual Info: r z 7 S G S -m 0 M S 0 N ^ 7 # iMneiioniugC T iH iM iio STTB 206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2A V rrm 600V trr (typ) 45ns V f (max) 1.3 V PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

51001Z

Abstract: STH51001Z laserdiode application 1300 laser diode rise time
Contextual Info: SIEMENS 1300 nm Laser in Coaxial TO-Package STH 51001Z • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power

IN916

Abstract: TDA8702 TDA8708A TDA8709A TDA8709AT
Contextual Info: IN TE G R A TE D C IR C U ITS h SlnllET TDA8709A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS PHILIPS 711065b 0073fe3fl 302 This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r

Contextual Info: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1

Contextual Info: SIEMENS 1550 nm Laser in Receptacle Package, Medium Power STM81007X • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

Contextual Info: SIEMENS 1300 nm Laser in Receptacle Package, High Power STH 51007X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

44256 dram

Abstract: reclaimer intel date code format 28F800B3 AT29C432 GF105 GM99
Contextual Info: D Flash Data Integrator FDI User’s Guide July, 1997 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

24536

Abstract: j-12000 502V1 500V10A 500VFR-A 500V30A 600VF-A 234 international
Contextual Info: 4 8 5 5 4 5 2 INTERNATIONAL R E C T IFIE R 73 I>F| 4 0 5 5 4 5 5 73C 0 7 3 6 1 G0D73tal fl | ~ D T '- O j- Z '} Data Sheet No. PD-2.180 IN T ER N A T IO N A L R E C T IF IE R I Q R 50GV-A, 500VF-A, 50SV-A, 502VF-A SERIES 50Q Amp Power Silicon Rectifier Diodes

daya tv

Abstract: IEC134 TDA8712 TDA8712T TDF8712 TDF8712T
Contextual Info: IN TE G R A TE D C IR C U ITS TD A8712; TDF8712 8-bit digital-to-analog converters Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 7110a2b 0G73bb2 b£l This M aterial C o p yrighted By Its Respecti v e M a n u f a c t u r e r

SAE j 726

Abstract: PEC 726 UF1004FCT tl 451 PEC 726 UF1004 J1706 DS36277 DS36277TM DS36277TN J1708 M08A
Contextual Info: DS36277 9 National Semiconductor DS36277 Dominant Mode Multipoint Transceiver General Description Features The DS36277 Dominant Mode Multipoint Transceiver is de­ signed for use on bi-directional differential busses. It is opti­ mal for use on Interfaces that utilize Society of Automotive

automatic changeover switch circuit diagram for generator

Abstract: RK411 RXEG 2 RXEG 21 rk 651 1MDB09009-EN 1MDB08003-EN 90092 201-CB 1MDB02006-EN
Contextual Info: Type RXEG ASEA B! .FiOVER Voltage relay and protection assemblies 1MDB09009-EN Page 1 March 1992 Changed since August 1990 Data subject to change without notice ABB Network Control & Protection 830506 Features Application • Single- and three-phase versions for o veror undervoltage protection

Contextual Info: / = T S G S -T H O M S O N " ¡ li. STV0020 lì ! t lO » I lU iC T M O g g SATELLITE SOUND AND VIDEO PROCESSOR ADVANCE DATA • TWO INDEPENDENTLY PROGAMMABLE SOUND DEMODULATORS ■ PLL DEMODULATION WITH 5-9MHz FRE­ QUENCY SYNTHESIS ■ 50/75HS, J17 OR NO DE-EMPHASIS PRO­

siemens RS 1001 L

Abstract: ax1201
Contextual Info: SIEMENS STL81004X S T L 81005X 1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

Contextual Info: r z 7 S G S -T H O M S O N L ie r a s * ^ 7 #® K S T T B 1 2 0 6 D I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 12A V rrm 600V trr (typ) 50ns V f (max) 1.3V K. FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

IN916

Abstract: TDA8702 TDA8708A TDA8708AT TDA8708B
Contextual Info: IN TE G R A TE D C IR C U ITS 'A 1H 1 E E T T D A 8708A Video analog input interface Product specification Supersedes data of April 1993 File under Integrated Circuits, IC02 June 1994 Philips Sem iconductors PHILIPS 7110fl2b 00735^4 2.50 This Material C o p yrighted By Its Respect i v e Ma nu f a c t u r e r

LD18A

Abstract: STV18N20 DG73
Contextual Info: £jï SGS-THOMSON M@IMllLiCTl Gl<£i STV18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss RDS on Id STV18N20 200 V < 0.18 ft 18 A • . . . . TYPICAL Rds(ON) = 0.145 Q AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 10OPC