Untitled
Abstract: No abstract text available
Text: REV. 2.1 FS8802-DS-21_EN Datasheet FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter SEP 2006 FS8802 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan
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FS8802-DS-21
FS8802
FS88rallel.
MS-012
006in)
010in)
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PDF
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E43028
Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat
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nc2d-p-ac24v
Abstract: NC2D-P-AC12V NC2D-JP-DC48V NC2D-AC100V 500va sine wave ups NC2D-JP-DC12V NC2D-JP-DC24V NC4D-AC100V NC2EBD-JP-DC24V NC2EBD-JP-DC12V
Text: NC 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves
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011010D
nc2d-p-ac24v
NC2D-P-AC12V
NC2D-JP-DC48V
NC2D-AC100V
500va sine wave ups
NC2D-JP-DC12V
NC2D-JP-DC24V
NC4D-AC100V
NC2EBD-JP-DC24V
NC2EBD-JP-DC12V
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PDF
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Untitled
Abstract: No abstract text available
Text: Fo r tun e FS8802 Semiconductor Corporation 富晶半導體股份有限公司 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Features General Description 1.0V Low Start-up Input Voltage at 1mA Load Deliver 3.3V at 100mA with 1V Input Voltage
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Original
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FS8802
100mA
550KHz
FS8802
400mA
015X45Â
MS-012
006in)
010in)
TD-0404010
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PDF
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schematic diagram converter input 24v to 12v
Abstract: FS8802CS
Text: Fo r tun e FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Semiconductor Corporation 富晶半導體股份有限公司 General Description Features The FS8802 is a compact, high-efficiency, step-up DC/DC converter that operates from an
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Original
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FS8802
400mA
100mA
550KHz
015X45°
MS-012
006in)
010in)
schematic diagram converter input 24v to 12v
FS8802CS
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PDF
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nc4ebd-jpl2-dc12v
Abstract: NC2D-JPL2-DC48V NC2D-JPL2-DC24V nc2d-jp-dc24v NC2D-JP-DC48V NC2D-JP-DC12V 384MH NC4EBD-L2-DC100V 173MH
Text: NC FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves
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Matsushita nc2d ac100v
Abstract: NC2D-JPL2-DC48V NC2D-JPL2-DC24V NC2D-JP-DC12V NC2D-JP-DC24V NC2D-JP-DC48V Matsua relay nt NC2-PS
Text: NC FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves
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ic tba 220
Abstract: km6161002j KM6161002-17
Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)
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OCR Scan
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KM6161002
KM6161002J-15:
230mA
KM6161002J-17:
220mA
KM6161002J-20:
210mA
KM6161002J:
44-Pin
Q0177DS
ic tba 220
km6161002j
KM6161002-17
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PDF
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TI41
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)
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OCR Scan
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KM64B258A
110mA
KM64B258AJ-8:
185mA
KM64B258AJ-10:
175mA
KM64B258AJ-12:
165mA
KM64B258AJ:
28-pin
TI41
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PDF
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Untitled
Abstract: No abstract text available
Text: M O SE L V IT E L IC V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY INFORMATION Features Description • ■ ■ ■ ■ ■ ■ ■ The V 62C 21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are
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OCR Scan
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V62C21162048
152-bit
44-pin
75TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation
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OCR Scan
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KM616V513
KM616V513J-17
130mA
KM616V513J-20
120mA
KM616V513J-25:
110mA
l/09-l/0
KM616V513J:
40-Pin
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PDF
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xxww
Abstract: KM68B257AJ-8
Text: SAMSUNG ELECTRONICS INC b?E D • 7 clb 4 m s []0 1 7 b 0 1 7 5 H m s h g k BiCMOS SRAM KM68B257A 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa s t A c c e s s T im e : 8 , 9 , 1 0 , 12n s M a x. • Low P o w er D issipation
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OCR Scan
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KM68B257A
017b01
110mA
KM68B257AJ-8:
185mA
KM68B257AJ-9:
KM68B257AJ-10:
175mA
KM68B257AJ-12:
xxww
KM68B257AJ-8
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PDF
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HY62U16100
Abstract: HY62U16100LLR2-I
Text: "HYUNDAI h y 6 2 V 1 6 1 0 0 - I /h y 6 2 U 1 6 1 0 0 -(I) 1 Series 64Kx16bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V16100-(l)/HY62U16100-(l) is a high speed, low power and 1M bits CMOS SRAM organized as 65,536 words by 16 bits. The HY62V16100-(I)/ HY62U16100-(I) uses sixteen
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OCR Scan
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64Kx16bit
44pin
400mil
HY62V16100-
/HY62U16100-
HY62U16100-
HY62V16100
HY62V16100-I
HY62U16100
HY62U16100LLR2-I
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package tsop1 28
Abstract: AX1127 0R015 PACKAGE DIMENSIONS 100-TQFP-1420A
Text: PACKAGE DIMENSIONS Unit : mm/inch 445 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -3 0 0 2 8 -D IP -4 0 0 446 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -6 0 0 B 3 2 -D IP -4 0 0 447 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 3 2 -D IP -6 0 0
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OCR Scan
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28-TSOP1-0813
1-0814F
32-TSO
004MAX
52-PLCC
100-TQFP-1420A
package tsop1 28
AX1127
0R015
PACKAGE DIMENSIONS
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: SMM-120-02-^ D-P SM M —12 4 - 0 2 - S - S auria^e S M . • . . • T j . I l i i n o H I G H R High reliability Tiger Eve contacts Ava. able with cpkonal Pick-anci-Place pads SPECIFICATIONS Materials:
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OCR Scan
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SMM-120-02-^
1-300-SAMTEC-9
812-944-t
i0i314
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PDF
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KM6164002j
Abstract: KM6164002 ISE Electronics
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)
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OCR Scan
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KM6164002
D0177BD
KM6164002J-20:
240mA
KM6164002J-25:
220mA
KM6164002J-35:
200mA
KM6164002J:
44-Pln
KM6164002j
KM6164002
ISE Electronics
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 7 E D • 7 ^ 4 1 4 2 G O lT b E M KM616513 2 5 1 SM6K CMOS SRAM 32,768 WORD x 16 BIT FEATURES GENERAL DESCRIPTION • F a s t A cc e s s T im e 15, 17, 20, 25ns m ax. • Low P o w er D is sip a tio n S tandb y (TTL) : 5 0m A (m ax.)
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OCR Scan
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KM616513
0017b24
KM6165135-15:
210mA
KM616513J-17:
200mA
KM616513J-20:
190mA
KM616513J-25:
180mA
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PDF
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R0310
Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Text: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)
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OCR Scan
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KM64258B
7Tbm42
D017Sfc
64KX4
KM642S8BP/J-15:
140mA
KM64258BP/J-20:
130mA
KM64258BP/J-25:
120mA
R0310
samsung CMOS SRAM
28-pin SOJ SRAM
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PDF
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KM681001J
Abstract: KM681001 KM681001-20 KM681001-35 KM681001-25 KM681001P
Text: SAMSUNG ELECTRONICS INC L.7E D • 7^4142 0D17b7b KM681001 bST SMGK CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.)
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OCR Scan
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KM681001
0D17b7b
128KX8
KM681001PM-20:
170mA
KM681001P/J-25:
150mA
KM681001P/J-35:
130mA
KM681001P:
KM681001J
KM681001
KM681001-20
KM681001-35
KM681001-25
KM681001P
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