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    KM6164002J Search Results

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    KM6164002J Price and Stock

    Samsung Semiconductor KM6164002J20

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    Bristol Electronics KM6164002J20 2
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    SEC KM6164002J-20

    IC,SRAM,256KX16,CMOS,SOJ,44PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM6164002J-20 40
    • 1 $17.4375
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    • 100 $14.3375
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    KM6164002J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hsm9350mhz

    Abstract: "Spanning Tree" TIBPAL22V10-15BC
    Text: Configuring the TNETX3150 ThunderSWITCH for the Cascade Mode APPLICATION REPORT: SDNA011 Date: May 1997 Networking Business Unit IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of


    Original     		TNETX3150 SDNA011 SDNA11 TNETX3150 hsm9350mhz "Spanning Tree" TIBPAL22V10-15BC PDF

    256x16* STATIC RAM

    Abstract: KM6164002j KM6164002 KM6164002E KM6164002I SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM KM6164002, KM6164002E, KM6164002I PACKAGE DIMENSIONS 44-SOJ-400 Units : Inches millimeters #23 9.40±0.25 0.370±0.010 10.16 0.400 #44 11.18±0.12 0.440±0.005 0.20 +0.10 -0.05 0.008 +0.004 -0.002 #22 #1 28.98 MAX 1.141 25.58±0.12


    Original     		KM6164002, KM6164002E, KM6164002I 44-SOJ-400 148MAX KM6164002E 256x16* STATIC RAM KM6164002j KM6164002 KM6164002I SRAM sheet samsung PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    24c02 atmel

    Abstract: TNETX3100 SN74LSXX atmel 24c02 FIGURE KM6164002J20
    Text: Building an 18 Port Switch Using Two TNETX3100 Desktop ThunderSWITCH Devices APPLICATION REPORT: SDNA019A Networking Business Unit October 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor


    Original     		TNETX3100 SDNA019A TNETX3100 24c02 atmel SN74LSXX atmel 24c02 FIGURE KM6164002J20 PDF

    KM6164002J-20

    Abstract: KM6164002J20
    Text: PRELIMINARY CMOS SRAM KM6164002 262,144 W ORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.) Operating KM6164002J-20: 240mA (Max.)


    OCR Scan     		KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pin KM6164002 KM6164002J-20 KM6164002J20 PDF

    KM6164002j

    Abstract: KM6164002J20
    Text: ADVANCE INFORMATION CMOS SRAM KM6164002 262,144 WORDx 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM6164002J-15: 280mA (max.)


    OCR Scan     		KM6164002 KM6164002J-15: 280mA KM6164002J-20: 260mA KM6164002J-25: 240mA KM6164002J: 44-pin KM6164002 KM6164002j KM6164002J20 PDF

    KM6164002j

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 2 5 6 K x 16 Bit High-Speed CM O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		KM6164002/KM6164002L 256Kx 500nA KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 I/O9-I/O16 KM6164002J/LJ 44-SOJ- KM6164002/L KM6164002j PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		KM6164002/KM6164002L 256Kx KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164002/L PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D 7 = ^4 1 4 2 0D14230 1ST ADVANCE INFORMATION KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.)


    OCR Scan     		0D14230 KM6164002 KM6164002J-15: 280mA KM6164002J-20: 260mA KM6164002J-25: 240mA KM6164002J: 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.)


    OCR Scan     		D0177B0 KM6164002 KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: KM6164002 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC>S):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		KM6164002/KM6164002L KM6164002/L-20 KM6164002/L-25 KM6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164Z 002152b PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (C M O S):10m A(M ax.) 500|.iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.)


    OCR Scan     		KM6164002/KM6164002L KM6164002/L-20 6164002/L-25 6164002/L-35 KM6164002J/LJ 44-SOJ- KM6164002/L 304-bit 0to70 PDF

    KM6164002j

    Abstract: KM6164002 ISE Electronics
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		KM6164002 D0177BD KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pln KM6164002j KM6164002 ISE Electronics PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6164002, KM6164002E, KM6164002I CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		KM6164002, KM6164002E, KM6164002I 64Kx16 KM6164002I KM6164002E 44-SOJ-400 PDF