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    0017B23 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80 PDF

    TRW catalogue

    Abstract: No abstract text available
    Text: MI T S U B I S H I M E M O R Y / A S I C blE D • b S MT ñH S D D 1 7 b l 2 2T1 ■ MITI MITSUBISHI LSIs M S M W ^ y O J . L J P . R T - e . ^ r Ö . - e S r y S . - S S s p jx FAST PAGE MODE 4194304-BIT(262144-WORD BY 16-BIT)DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs,


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    4194304-BIT 262144-WORD 16-BIT 40P5P 40pin 475mil 24Tfl5S M5M4V4170J TRW catalogue PDF

    CSP1084

    Abstract: at&t dsp1610 RXQ1 rxq2 005D IS-54 1251 30 34B
    Text: AT&T K ' Ï Ï Ï Ï * ° ata Sh6et Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB gain in 2 dB steps


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    CSP1084 IS-54 005002b 17L31 CSP1084 100-Pin 005002k. 0017b32 at&t dsp1610 RXQ1 rxq2 005D 1251 30 34B PDF

    cd 4611

    Abstract: No abstract text available
    Text: •â n i a i May ÎÏS r DataSh6et IP Microelectronics CSP1084 Baseband Radio Interface for IS-54 Dual-Mode Cellular Telephone Applications Features Description ■ Receive path — Decimation and postfiltering to 10 bits — Programmable gain amplifier with 0 dB to 18 dB


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    CSP1084 IS-54 0050Q2k> CSP1084 100-Pin Q0S002t. 0017b32 cd 4611 PDF

    m51171

    Abstract: m32AG M5116
    Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    MSM5116180 576-Word 18-Bit MSM5116180 cycles/64ms m51171 m32AG M5116 PDF

    Untitled

    Abstract: No abstract text available
    Text: That mLHM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar TVansistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


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    AT-41400 AT-41400 Rn/50 44475A4 0017b23 250jim 4447S 0017b24 PDF