Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC LITEW 2 4^E T> • 0035^5 000310b 410 ITLIT: L Ï M . Î 8 X 1S3 FEATURES • THE S O L ID L IG H T SOURCE BE ABLE TO R E D U C E M E C H A N IC A L S T R U C T U R E . • LOW POWER R E Q U IR E M E N T . •E X C E L L E N T C H AR ACTER S APPEARANCE.
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000310b
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plasma display driver
Abstract: No abstract text available
Text: 0=11,1754 000310b T 'S Z A l- O ^ 4 • T II4 SN55S01E AC PLASMA DISPLAY DRIVER TEXAS • INSTR LIN/INTFC D2472, APRIL 1986-R EVISED DECEMBER 1989 J PACKAGE (TOP VIEW) 1 0 0-V Totem-Pola Outputs • Low Stand-by Pow er Consumption • All Outputs Contain Sink and Source Clam p
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000310b
SN55S01E
D2472,
1986-R
55501D
plasma display driver
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TS68008VC8
Abstract: mtt 55 EF6852 9011-0030 IC 7482 64S3 68000 thomson
Text: ^ THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68008 8/32-BIT MICROPROCESSOR WITH 8-BIT DATA BUS DESCRIPTION The TS 68008 is a member of the TS 68000 fam ily of advan ced microprocessors. This device allows the design o f cost effective systems using 8-bit data buses w hile providing the
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8/32-BIT
32-bit
16-bit
an125
TS68008MC8B/Y8
TS68008MCB/C8
TS68008MCG/B8
TS68020DESC0XC
MIL-STD-883
TS68008VC8
mtt 55
EF6852
9011-0030
IC 7482
64S3
68000 thomson
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Untitled
Abstract: No abstract text available
Text: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
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IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
35Qis
350ns)
256ms
128ms,
43G9649
SA14-4201
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OPB900W
Abstract: OPB910W QPB900W QPB910W
Text: .OPTEK Product Bulletin OPB900W July 1996 Photologic0 Slotted Optical Switches Types QPB900W, QPB910W “Wide Gap” Series Features • • • • 0.375" 9.53 mm wide gap Choice of aperture Choice of output configuration Choice of opaque or IR transmissive
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OPB900W
QPB900W,
QPB910W
26AWG
OPB910W
QPB900W
QPB910W
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Untitled
Abstract: No abstract text available
Text: y a y h V Schottky Barrier Diode # — K - v fjiia D3S4M 4 0 V OUTLINE DIMENSIONS Case : 1.4 ^ 3 A 25 ±2 m 7 1<? ìt 2S=2 a f 4.4 -o t - • T j 1 5 0 ”C • P rrsm • 1.4 K Axial Diode -É 5 - 1* K U— K o - -W w&m ''C o lor code ffl m •S R B ü
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QQQ31Ã
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vt20c98
Abstract: No abstract text available
Text: V L S I TECHNOLOGY INC IflE D • =1300347 Q G 0 3 1 Ô 3 7 ■ V L S I Technology in c . P R E L IM IN A R Y VT20C98 • VT20C99 8 ,1 9 2 x 8 SRA M FEATURES DESCRIPTION • High speed a c c e ss and cycle times: 25, 30 and 35 ns T he V T 2 0 C 9 8 and V T 2 0 C 9 9 are
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VT20C98
VT20C99
vt20c98
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t02-40
Abstract: No abstract text available
Text: DIXYS Thyristor Modules Thyristor/Diode Modules MCC 56 MCD 56 TRMS TAVM = 2x100 A = 2 x 64 A V RRM = 800 -1800 V T0-240 AA V RSM V VDSM VDRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC
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2x100
T0-240
56-08io1
56-12io1
56-14io1
56-16io1B
56-18io1B
56-08io8
56-12io8
56-14io8B
t02-40
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marking g9c
Abstract: No abstract text available
Text: 3flE D MICRON TECHNOLOGY INC • IMRN talllSMI OOOBO^fl 5 ADVANCE t -H C -z 2K x 9 FIFO FIFO FEATURES PIN ASSIGNMENT Top View Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typ. (standby); 350mW typ. (active)
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350mW
T-46-35
marking g9c
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