0.6 UM CMOS PROCESS Search Results

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

A2ND

Abstract: KM68U512ALE-L KM68V512A
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

km616u1000b

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16

KM68U1000BLG8L

Abstract: KM68V1000BLG7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.

TAA 310A

Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
Contextual Info: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible

Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min

a13e

Contextual Info: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

CMOS 7

Abstract: 135C F9906-05 CMOS7
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-05 DATE: Product Affected: 723642Y Product Family: FIFO 723622/23/24/26/32/33/34/36/42/43/44/46Y Manufacturing Location Affected:

0.6 um cmos process

Abstract: 135C
Contextual Info: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: F9906-06 DATE: MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: 72V3642Y Product Family: FIFO Product Mark 72V3622/23/24/26/32/33/34/36/42/43/44/46Y

BCD8

Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
Contextual Info: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

ST74HC541

Abstract: S9226-03 KMPDA0172EE
Contextual Info: CMOS linear image sensors CMOS linear image sensors S9226 series Built-in timing generator and signal processing circuit; 3.3 V single supply operation The S9226 series is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a

G10768

Abstract: 1000 hz cmos Image Sensors
Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768 series is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses

s9226

Contextual Info: CMOS linear image sensors CMOS linear image sensors S9226 series Built-in timing generator and signal processing circuit; 3.3 V single supply operation The S9226 series is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a

Contextual Info: InGaAs linear image sensors G10768 series Near infrared image sensor 0.9 to 1.7 m with 1024 pixels and high-speed line rate The G10768-1024D is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. The signal processing circuit uses