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    0.3W TO 1W TRANSISTORS Search Results

    0.3W TO 1W TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    0.3W TO 1W TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    mosfet 9544

    Abstract: mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


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    PDF RA01L9595M 952-954MHz RA01L9595M mosfet 9544 mosfet st 9544 transistor 9527 mosfet 9519 mosfet 9517 ST 9527 RF MOSFET MODULE 9529 mosfet 951 t40 9544 transistor

    transistor 9527

    Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


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    PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams

    transistor 9527

    Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


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    PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527

    mosfet st 9544

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


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    PDF RA01L9595M 952-954MHz RA01L9595M mosfet st 9544

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


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    PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPS3601 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION „ DESCRIPTION The UTC UPS3601 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with


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    PDF UPS3601 UPS3601 QW-R119-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPS3652 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH  DESCRIPTION The UTC UPS3652 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with minimal external components. The UTC UPS3652 is designed to


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    PDF UPS3652 UPS3652 QW-R119-021

    UPS3652

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UPS3652 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH  DESCRIPTION The UTC UPS3652 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with minimal external components. The UTC UPS3652 is designed to


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    PDF UPS3652 UPS3652 QW-R119-021

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS3652 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH  DESCRI PT I ON The UTC UPS3652 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with minimal external components. The UTC UPS3652 is designed to


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    PDF UPS3652 UPS3652 QW-R119-021

    NTC 5D-9 THERMISTOR

    Abstract: THERMISTOR NTC 5D-9 IC 2003 ntc 5d-9 FAN7601 FAN7601 application data 5d-9 thermistor Voltech pm3000 CT 5D-9 EER-2828
    Text: www.fairchildsemi.com Application Note AN4129 Green Current Mode PWM Controller FAN7601 1. Introduction This application note describes the operation and features of the FAN7601. This device is a BCDMOS programmable frequency current mode PWM controller which is designed


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    PDF AN4129 FAN7601 FAN7601. FAN7601 FAN7601ENT NTC 5D-9 THERMISTOR THERMISTOR NTC 5D-9 IC 2003 ntc 5d-9 FAN7601 application data 5d-9 thermistor Voltech pm3000 CT 5D-9 EER-2828

    uu9.8

    Abstract: 7D471K 20/UU9.8
    Text: UNISONIC TECHNOLOGIES CO., LTD UPS4602 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH WITH ZERO CURRENT DETECTION „ DESCRIPTION The UTC UPS4602 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with


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    PDF UPS4602 UPS4602 QW-R119-019 uu9.8 7D471K 20/UU9.8

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UPS4602 LINEAR INTEGRATED CIRCUIT H I GH PERFORM AN CE CU RREN T M ODE POWER SWI T CH WI T H Z ERO CU RREN T DET ECT I ON ̈ DESCRI PT I ON The UTC UPS4602 is an integrated PWM controller and PowerMOSFET specifically designed for switching operation with


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    PDF UPS4602 UPS4602 QW-R119-019

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


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    PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD US1602 Preliminary LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE POWER SWITCH  DESCRIPTION DIP-8 The UTC US1602 is an integrated PWM controller and Power MOSFET specifically designed for switching operation with minimal


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    PDF US1602 US1602 QW-R119-021

    2156D2

    Abstract: PHONEJACK STEREO SW 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM KML2012Q102N TMPA2156D2 circuit diagram for 2.1 ch speaker
    Text: Tai-1 Microelectronics TMPA2156D2 Preliminary www.taimec.com.tw Rev.1.0 September 7, 2005 0.73W/CH STEREO CLASS-D AUDIO POWER AMPLIFIER GENERAL DESCRIPTION FEATURES The TMPA2156D2 is a STEREO class-D audio power amplifier ♦ 2.5V to 6V Single Supply IC. With SE Single-Ended configuration, it delivers up to


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    PDF TMPA2156D2 TMPA2156D2 2156D2 PHONEJACK STEREO SW 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM KML2012Q102N circuit diagram for 2.1 ch speaker

    sj 2038

    Abstract: sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 27MHz, 770MHz, 50MHz, sj 2038 sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A

    transistor 1247a

    Abstract: 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 150MHz, 2SA794A T--25' 2SA808A 1707A1 300nS 220nS 100Hz, transistor 1247a 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A

    RCA-41024

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
    Text: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )


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    PDF RCA-41024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024

    2SA678

    Abstract: transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M -EiiO SW H E N ew T ransistor Manual lists all the transistors registered w ith the Electronic Industries A ssociation of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you w ill m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2139a 2SA968A 2238b 2SA968B 2SA678 transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A