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    0.18 UM CMOS PARAMETERS Search Results

    0.18 UM CMOS PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    0.18 UM CMOS PARAMETERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NMOS transistor 0.18 um CMOS

    Abstract: 1P3M LOCOS
    Text: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		6V/16V NMOS transistor 0.18 um CMOS 1P3M LOCOS PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		PDF

    INTERMETal diode

    Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
    Text: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


    Original     		2V/12V INTERMETal diode zener diode BN NMOS transistor 0.18 um CMOS BPSG PDF

    magnachip 0.18um

    Abstract: NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS
    Text: 0.18um 1P4M High Voltage 30V updated in 2005.03.29 Features Voltage Logic(LV,MV ,High Voltage) ƒ 1.8V/5V/30V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV, MV-Device )


    Original     		V/5V/30V magnachip 0.18um NMOS transistor 0.18 um CMOS hv 082 MagnaChip Semiconductor HV800 magnachip 0.18um CMOS PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN 8/21/00 PCN #: SR0008-03 DATE: Product Affected: 71V416S/L, 71V424S/L, 71V428S/L Manufacturing Location Affected: Date Effective: 11/20/00 Contact:


    Original     		SR0008-03 71V416S/L, 71V424S/L, 71V428S/L FRC-1509-01 QCA-1795 PDF

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G PDF

    C350AVB

    Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
    Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices


    OCR Scan     		37MT7bH 74LS175 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A C350AVB full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder PDF

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


    Original     		PDF

    71016s

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:


    Original     		SR0011-04 71016S, 71124S, 71128S 71016s PDF

    XC6SLX45t-fgg484

    Abstract: XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow
    Text: Device Reliability Report Third Quarter 2010 UG116 v5.11 November 1, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the “Documentation”) to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		UG116 611GU FGG676 FFG1152 XC6SLX45t-fgg484 XC6SLX16-CSG324 XC6SLX100-FGG676 XC6SLX45 FGG484 x2 type ac capacitor XC6SLX16 FIT rate xc3s3400a UG116 XC95288 Virtex-6 reflow PDF

    Virtex-6 reflow

    Abstract: WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320
    Text: Device Reliability Report First Quarter 2010 UG116 v5.9 May 4, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, p∅ost, or transmit the


    Original     		UG116 611GU FGG676 FFG1152 Virtex-6 reflow WS609 xc3s3400a xcv400e-b UG116 XCS20XL pqg208 UG-116 XC1702L XCE4VSX25 xc3s500e fg320 PDF

    74LS107

    Abstract: No abstract text available
    Text: 53E J> S A N YO SEMICONDUCTOR CORP O rd e rin g n u m b e r : E N 3 5 9 2 j 7TÌ707ÌJ 0010523 TbO ITSAJ r- H6-or-or MLC74HC107 No.3592 SANYO CMOS High-Speed S tandard Logic j Dual J-K Flip-Flop w ith Reset F e a tu re s • Dual J-K flip-flop/Falling-edge triggered clock input/Active-Low reset input.


    OCR Scan     		MLC74HC107 MLC74HC107 74LS107) 74LS107 PDF

    XCV100 TQ144

    Abstract: XCS20XL pqg208 XC3S700AN FGG484 WS609 x2 type ac capacitor UG-116 xc3s200an pqg208 SPARTAN-3 XC3S400 PQ208 XC3S200 RELIABILITY REPORT UG116
    Text: Device Reliability Report First Quarter 2009 [optional] UG116 v5.5 June 15, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		UG116 611GU FGG676 FFG1152 XCV100 TQ144 XCS20XL pqg208 XC3S700AN FGG484 WS609 x2 type ac capacitor UG-116 xc3s200an pqg208 SPARTAN-3 XC3S400 PQ208 XC3S200 RELIABILITY REPORT UG116 PDF

    MC74 motorola

    Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
    Text: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    OCR Scan     		MC74VHC04 51Ting DL203 ------------------------------MC74VHC04/D MC74 motorola MC74 MC74VHCXXD MC74VHCXXDT 3B252 PDF

    blood pressure circuit schematic

    Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
    Text: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:


    Original     		PDF

    ttl 74ls109

    Abstract: 74LS109
    Text: SANYO SEM ICONDUCTOR CORP S3E ] Ordering number: EN 3897 7 T ì7 0 7 b D D 1G S 3S 7ÔE » T S A J T - HC- 0 7 - 0 7 MLC74HC109 i i SAW O CMOS High-Speed S tandard Logic Dual J-K Flip-Flop w ith Set and Reset F e a tu re s • Dual J-K flip-flop/Falling-edge triggered clock input/Active-Low reset input.


    OCR Scan     		MLC74HC109 MLC74HC109 74LS109) ttl 74ls109 74LS109 PDF

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 PDF

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI PDF

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


    Original     		PDF

    philips tea 1090

    Abstract: PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan     		PZ3064 50MHz OT382-1 MO-108CC-1 philips tea 1090 PAL 007 B pal 002 PZ3064 PZ3064-10A44 PZ3064-10BC PZ3064-12A44 PZ3064-12BC PZ3064I12A44 PZ3064I12BC PDF

    pal 012 a

    Abstract: PAL 012
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ3064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ3064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan     		PZ3064 MO-108CC-1 T382-1 pal 012 a PAL 012 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan     		PZ5064 MO-108CC-1 T382-1 PDF

    philips tea 1090

    Abstract: mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC
    Text: Philips Sem iconductors Product specification 64 macrocell CPLD PZ5064 FEATURES DESCRIPTION • Industry’s first TotalCMOS PLD - both CM OS design and process technologies The PZ5064 CPLD Com plex Program mable Logic Device is the second in a fam ily of Fast Zero Power (FZP™) CPLDs from Philips


    OCR Scan     		PZ5064 50MHz OT382-1 MO-108CC-1 philips tea 1090 mc15 PAL 007 B PAL 007 E pal 002 PZ3064 PZ5064-10A44 PZ5064-10BC PZ5064-7A44 PZ5064-7BC PDF

    2JTA

    Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
    Text: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    OCR Scan     		MC74VHC74 303-675-2140or 51Ting MC74VHC74/D DL203 1G045S 2JTA DL203 MC74VHCXXD MC74VHCXXDT MC74VHCXXM PDF