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    R1LP0408C Search Results

    R1LP0408C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1LP0408CSB-5SI#S0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Embossed Tape Visit Renesas Electronics Corporation
    R1LP0408CSP-7LI#S0 Renesas Electronics Corporation Low Power SRAM, SOP, /Embossed Tape Visit Renesas Electronics Corporation
    R1LP0408CSB-5SI#D0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Embossed Tape Visit Renesas Electronics Corporation
    R1LP0408CSP-7LI#B0 Renesas Electronics Corporation Low Power SRAM, SOP, /Tube Visit Renesas Electronics Corporation
    R1LP0408CSB-7LC#B0 Renesas Electronics Corporation Low Power SRAM, TSOP(2), /Tray Visit Renesas Electronics Corporation
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    R1LP0408C Price and Stock

    Rochester Electronics LLC R1LP0408CSB-7LC-D0

    IC SRAM 4MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LP0408CSB-7LC-D0 Tray 19
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    Rochester Electronics LLC R1LP0408CSP-7LC-B0

    IC SRAM 4MBIT PARALLEL 32SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LP0408CSP-7LC-B0 Bulk 19
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    Rochester Electronics LLC R1LP0408CSC-5SI-D0

    STANDARD SRAM, 512KX8, 55NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LP0408CSC-5SI-D0 Bulk 19
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    Rochester Electronics LLC R1LP0408CSB-5UC-D0

    STANDARD SRAM, 512KX8, 55NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LP0408CSB-5UC-D0 Bulk 19
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    Rochester Electronics LLC R1LP0408CSB-7UI-D0

    STANDARD SRAM, 512KX8, 70NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1LP0408CSB-7UI-D0 Bulk 19
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    Find more R1LP0408C price and stock on Findchips.com

    R1LP0408C Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1LP0408C Hitachi Semiconductor Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408C-C Renesas Technology Original PDF
    R1LP0408C-C Series Renesas Technology 4M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408C-I Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408C-I Series Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-5SC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-5SC#D0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP Original PDF
    R1LP0408CSB-5SC#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP Original PDF
    R1LP0408CSB-5SI Hitachi Semiconductor Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-5SI Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-5SI#D0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP Original PDF
    R1LP0408CSB-5SI#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 32TSOP Original PDF
    R1LP0408CSB-7LC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-7LC#D0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP Original PDF
    R1LP0408CSB-7LC#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP Original PDF
    R1LP0408CSB-7LI Hitachi Semiconductor Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSB-7LI#D0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP Original PDF
    R1LP0408CSB-7LI#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32TSOP Original PDF
    R1LP0408CSC-5SC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LP0408CSC-5SI Hitachi Semiconductor Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Original PDF

    R1LP0408C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R1LP0408C-C Series 4 M SRAM 512-kword x 8-bit REJ03C0077-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		PDF R1LP0408C-C 512-kword REJ03C0077-0100Z 32-pin

    R1LP0408CSB-7LI

    Abstract: R1LP0408CSC-5SI R1LP0408C-5SI R1LP0408C-I R1LP0408CSB-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI MAY26 R1LP0408CSP
    Text: R1LP0408C-I Series Wide Temperature Range Version 4M SRAM 512-kword x 8-bit REJ03C0067-0200Z Rev. 2.00 May.26.2004 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology


    Original     		PDF R1LP0408C-I 512-kword REJ03C0067-0200Z 32-pin R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408C-5SI R1LP0408CSB-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI MAY26 R1LP0408CSP

    R1LP0408CSB-5SC

    Abstract: R1LP0408CSP-5SC R1LP0408C-C R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-7LC r1lp0408csb R1LP0408CSP5SC
    Text: R1LP0408C-C Series 4M SRAM 512-kword x 8-bit REJ03C0077-0200Z Rev. 2.00 May.26.2004 Description The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		PDF R1LP0408C-C 512-kword REJ03C0077-0200Z 32-pin 32-pin R1LP0408CSB-5SC R1LP0408CSP-5SC R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-7LC r1lp0408csb R1LP0408CSP5SC

    R1LP0408C-I

    Abstract: R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI
    Text: R1LP0408C-I Series Wide Temperature Range Version 4 M SRAM 512-kword x 8-bit REJ03C0067-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology


    Original     		PDF R1LP0408C-I 512-kword REJ03C0067-0100Z 32-pin R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-5SI R1LP0408CSP-7LI

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HM2V8100TTI5SE

    Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
    Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns


    Original     		PDF TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    R1LP0408C-5SI

    Abstract: R1LP0408CSP-5SI R1LP0408C-I R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LP0408CSP-7LI r1lp0408c
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		PDF AN1012

    HN58V1001TI-25E

    Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI
    Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,


    Original     		PDF REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI

    M5M5256DFP-70LL*bm

    Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
    Text: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns


    Original     		PDF M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI

    R1LP0408CSP-5SC

    Abstract: R1LP0408C-C R1LP0408CSB-5SC R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-7LC
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    r1lv0108

    Abstract: R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF R10PF0003ED0100 r1lv0108 R1LP0108 HM216514 R1LV1616 HM216514TTI5SE R1LP0408CSP-5SC R1LP0108ESP R1LP0108ESr r1lv0414dsb-5si R1LP0108ESR-7SR

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		PDF R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		PDF R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI