AMCC DATE CODE MARKING
Abstract: S19227 S19237 OC-192 framer mapper s19227 VDD12B amcc part marking marking SCC11 S19237PB13 10gb TX drive AMCC STS-192
Text: Part Number S19237 Revision 5.05 – February 28, 2007 S19237 Data Sheet SONET STS-192/10GbE CMOS Transceiver with ISI Compensation GENERAL FEATURES • • • • • • • • • • • • • • APPLICATIONS Low Power CMOS 1.0 Watts Typ. CMOS 0.13 Micron Technology
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S19237
S19237
16-bit
FEC/10
DS1454
AMCC DATE CODE MARKING
S19227
OC-192 framer mapper s19227
VDD12B
amcc part marking
marking SCC11
S19237PB13
10gb TX drive
AMCC STS-192
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infineon starlib
Abstract: C166S Digital logic gates Components
Text: Product Brief HIGHLIGHTS C9N is a general purpose quarter micron CMOS technology for digital and mixed signal applications. Its extremely low leakage current make it an excellent fit for battery operated systems like mobile phones. In addition, C9N offers high
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C166S,
B134-H7537-X-X-7600
infineon starlib
C166S
Digital logic gates Components
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AMCC s3055
Abstract: 2s3055
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER S3055 S3055 S3055 GENERAL DESCRIPTION FEATURES • CMOS 0.18 micron technology
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OC-48
OC-12
S3055
S3055
OC-48
16-bit
D147/R437
AMCC s3055
2s3055
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infineon starlib
Abstract: C10DE C10N C166 0.18-um CMOS technology characteristics
Text: Product Brief HIGHLIGHTS C10N/DE is a general purpose 0.18 micron CMOS technology for digital and mixed signal applications. To allow for maximum performance at low leakage current C10 offers two flavors of Infineon’s library of logic cells. High Vt cells offer
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C10N/DE
B134-H7538-X-X-7600
infineon starlib
C10DE
C10N
C166
0.18-um CMOS technology characteristics
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER S3055 S3055 S3055 GENERAL DESCRIPTION FEATURES • CMOS 0.18 micron technology
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OC-48
OC-12
S3055
S3055
OC-48
16-bit
D147/R437
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s3055pb
Abstract: amcc CDR S3055 S4801 S4802 S4804 S4805 STS-48 STS-48C AMCC S19201
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
OC-48
16-bit
25tion
D147/R1211
s3055pb
amcc CDR
S3055
S4801
S4802
S4804
S4805
STS-48
STS-48C
AMCC S19201
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3055
S3055
OC-48
16-bit
D147/R839
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PINN10
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3055
S3055
OC-48
16-bit
D147/R1085
PINN10
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2s3055
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SONET/SDH/ATM OC-48 16 BIT TRANSCEIVER WITH CDR BiCMOS LVPECL OC-12 CLOCK16 GENERATOR SONET/SDH/ATM OC-48 BIT TRANSCEIVER WITH CDR TRANSMITTER AND RECEIVER • • • • • FEATURES • CMOS 0.18 micron technology • Complies with Bellcore and ITU-T
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OC-48
OC-12
S3055
S3055
OC-48
16-bit
D147/R710
2s3055
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MI-MV13
Abstract: M4T11 cmos 3.1 megapixel 18 pin image sensor V7514 "Micron Technology" cmos c16
Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic
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MI-MV13
10-bit
10-bit-wide
09005aef806807ca
MT9M413C36STC
M4T11
cmos 3.1 megapixel 18 pin image sensor
V7514
"Micron Technology" cmos c16
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MI-MV13
Abstract: 14 pin cmos IMAGE SENSOR 3-pin IR sensor monochrome cmos digital image image sensor MT9M413 mt9m413 CMOS digital image sensor with global shutter sensor g18 13-megapixel MT9M413C36STC
Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic
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MT9M413
MT9M413C36STC
MI-MV13
10-bit
10-bit-wide
09005aef806807ca
MT9M413C36STC
14 pin cmos IMAGE SENSOR
3-pin IR sensor
monochrome cmos digital image
image sensor MT9M413
mt9m413
CMOS digital image sensor with global shutter
sensor g18
13-megapixel
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Untitled
Abstract: No abstract text available
Text: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16C [packaged] / Mfg part number WX2C16C [die])
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ST9T012-S
ST9T012-G
GXMC16C
WX2C16C
09005aef82c10d05/PDF:
09005aef82c10d60
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Untitled
Abstract: No abstract text available
Text: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief with ODS ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16B [packaged] / Mfg part number WX2C16B [die])
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ST9T012-S
ST9T012-G
GXMC16B
WX2C16B
09005aef82b6728b/
09005aef82b6724d
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Untitled
Abstract: No abstract text available
Text: 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Full Sensor Features 1/3.2-Inch 3.1-Megapixel CMOS Digital Image Sensor Product Brief with ODS ST9T012-S Select 3120 ST9T012-G General (3120) (Mfg part number GXMC16B [packaged] / Mfg part number WX2C16B [die])
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ST9T012-S
ST9T012-G
GXMC16B
WX2C16B
09005aef82b6728b/
09005aef82b6724d
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Untitled
Abstract: No abstract text available
Text: PF108-51 S L A 5 0 0 0 s e r ie s CMOS GATE ARRAY # 3 Micron Dual Layer Metal # 5 Sizes #Fast Design Cycle • DESCRIPTION The SLA5000 series consists of a group of five CMOS gate arrays with gate counts from 413 to 3,082 gates. The series is fabricated utilizing our 3 micron high speed CMOS silicon gate technology to achieve propa
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PF108-51
SLA5000
SLA5120
SLA5210
SLA5300
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Untitled
Abstract: No abstract text available
Text: EPM7256 EPLD □ Features □ □ □ □ High-density, erasable CMOS EPLD based on second-generation Multiple Array Matrix MAX architecture 5,000 usable gates Combinatorial speeds with tPD = 20 ns Clock frequencies up to 62.5 MHz Advanced 0.8-micron CMOS EPROM technology
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EPM7256
192-pin
208-pin
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Untitled
Abstract: No abstract text available
Text: IDT74FCT163952A/B/C 3.3V CMOS 16-BIT REGISTERED TRANSCEIVER D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - Typical tSK o (Output Skew) < 250ps advanced dual metal CM O S technology. These high-speed, low-power - ESD > 2000V per MIL-STD-883, Method 3015;
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16-BIT
IDT74FCT163952A/B/C
250ps
MIL-STD-883,
200pF,
FCT163952A/B/C16-bit
S056-1)
S056-2)
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Untitled
Abstract: No abstract text available
Text: PI74ALYC162834F 18-Bit Universal Bus Driver with 3-State Outputs Product Description Product Features Pericom Semiconductor’s PI74ALVC series of logic circuits are produced using the Company’s advanced 0.5 micron CMOS technology, achieving industry leading speed.
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PI74ALYC162834F
18-Bit
PI74ALVC162834F
56-pin
PI74ALVC
PS8378
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4 L C16M1A1 16 MEG X 1 DRAM |V|IC=RON DRAM 16 MEG x1 DRAM FAST PAGE MODE m £ o 30 > FEATURES • Industry standard x l pinout, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single power supply: +5V ±10% only or +3.3V ±10%
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C16M1A1
096-cycle
24-Pin
A0-A10;
A0-A11
C1992,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DRAM 16 MEG X 1 DRAM FAST PAGE MODE FEATURES • Industry standard xl pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply: +5V +10% only or +3.3V +10% only • Low power, 3mW standby; 325mW active, typical 5V
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325mW
096-cycle
24-Pin
G16M1A1
C16M1A1
A0-A10;
A0-A11
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC blllSMl 0Q0H23H 474 • MRN SSE ]> PRELIM INARY Ut.KNOLOO'» M IC - T DRAM H fc -t-J - \ S 16 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, tim ing, functions and
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0Q0H23H
C16M1A1
096-cycle
24-Pin
blll54
Q0D4244
A0-A10;
A0-A11
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MT4C16256DJ-7
Abstract: No abstract text available
Text: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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256Kx
16DRAM
512-cycle
MT4C16257
MT4C16256/7
CYCLE24
MT4CI82S4/7
1QT94
QD1111D
MT4C16256DJ-7
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Untitled
Abstract: No abstract text available
Text: ADVANCE im ir—p n i v i I " “ T m t 4LCi 6M4A7/t s 1 6 MEGX4 DRAM 16 MEG x 4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V pow er supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 colum n-addresses A7 or
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096-cycle
MT4LC16M4A7DW-7
MT4LC16M4A7/T8
16MEGx4DETAWÂ
MT4LC16M4A7ST8
0G11241
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34992
Abstract: SSC5100 F232-10 pinpad 78568
Text: S-n 0 S SYSTEMS INC 5bE D • 7 cï 3 S tl D c1 G ODI Sb b SSC5000 'Ib? M S MO Series 0.8u HIGH SPEED CMOS STANDARD CELL SERIES° 7 ■ DESCRIPTION The S-MOS SSC5000 standard cell series is a 0.8 micron drawn family of standard cell circuits. It is manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal N-well CMOS process. It Is comprised of 20
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SSC5000
SSC5000
SSC50LQ
C-115
34992
SSC5100
F232-10
pinpad
78568
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