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    C10DE Search Results

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    C10DE Price and Stock

    Rochester Electronics LLC SN74AC10DE4

    IC GATE NAND 3CH 3-INP 14SOIC
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    DigiKey SN74AC10DE4 Tube 1,950 1,950
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    Sullins Connector Solutions JCC10DEYS

    CONN EDGE DUAL FMALE 20POS 0.100
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    DigiKey JCC10DEYS Tray 10
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    Sullins Connector Solutions RCC10DETN

    CONN EDGE DUAL FMALE 20POS 0.100
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    DigiKey RCC10DETN Tray 10
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    Sullins Connector Solutions RCC10DEYI

    CONN EDGE DUAL FMALE 20POS 0.100
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    DigiKey RCC10DEYI Tray 10
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    Sullins Connector Solutions JBC10DETH

    CONN EDGE DUAL FMALE 20POS 0.100
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    DigiKey JBC10DETH Tray 10
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    C10DE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C10DE

    Abstract: C10N asic design flow
    Text: Product Brief HIGHLIGHTS Infineon Technologies C10DE eDRAM technology will become a keystone for many of next generation’s SoC ASICs. C10DE is based on Infineon's advanced deep sub-micron 0,18 µm logic optimized C10N CMOS process technology. C10DE enables high bandwidth, high performance integrated DRAM subsystems. Target applications are networking,


    Original     		C10DE B134-H7535-X-X-7600 C10N asic design flow PDF

    T3D zener DIODE

    Abstract: T3D 15 zener DIODE BM 3843 T3D 19 zener DIODE T3D 65 diode
    Text: MIC38C/HC42/3/4/5 MIC38C/HC42/3/4/5 BiCMOS Current-Mode PWM Controller General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. Micrei’s BiCMOS devices are pin compatible with 384x bipolar de­


    OCR Scan     		MIC38C/HC42/3/4/5 MIC38C4x MIC38HC4x rise/30ns MIC38C42 rise/15ns MIC38HC42 UC284x 24-Pin T3D zener DIODE T3D 15 zener DIODE BM 3843 T3D 19 zener DIODE T3D 65 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION K DO NOT SCALE FROM THIS PRINT MMTXX-XX-XX-X-X-XX.XX-X-X-XXX FIG 1 ROW OPTION -D: DOUBLE MMTD-06-20-X-X-XX.XX-S SHOWN -S: SINGLE SEE SHT 3, FIG. 4 C C1-A-DC PTFE CABLE OPTION -T: PTFE (NO OF POS X.100 [2.54]) (LEAVE BLANK FOR +.070 [1.78] REF 01 02


    Original     		MMTD-06-20-X-X-XX IPM1-06-D SCHMELZ12/04/2008 PDF

    infineon starlib

    Abstract: C10DE C10N C166 0.18-um CMOS technology characteristics
    Text: Product Brief HIGHLIGHTS C10N/DE is a general purpose 0.18 micron CMOS technology for digital and mixed signal applications. To allow for maximum performance at low leakage current C10 offers two flavors of Infineon’s library of logic cells. High Vt cells offer


    Original     		C10N/DE B134-H7538-X-X-7600 infineon starlib C10DE C10N C166 0.18-um CMOS technology characteristics PDF