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Partial File Text ÖIXYS HiPerFASTTM IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE(sat) tfi 600 V 75 A 2.7 V 275 ns Symbol V ,,,, Test Conditions T T, 25° C to 150° C 2 5 °C to 1 5 0 °C ;F L 1 MQ Maxi
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