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    60N60A

    Abstract: c5021-0
    Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90


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    PDF 50N60AU1 O-264 JEDECTO-264AA 100-C 50N60AU1 60N60A c5021-0