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    • Insulated Gate Bipolar Transistors (IGBT) 4^ r /ioei fType Tjh = 150°C New IXGH 10N60 IXGH 20N60 IXGH 31N60 IXGH 30N60 IXGH 38N60 IXGH 40N60 IXGH 60N60 IXGH 10N100 IXGH 17N100 IXGH 25N100 IXGH 25N12
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