DSA002592.pdf by Fairchild Semiconductor

Partial File Text ® FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description · 2.5 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced us
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FQD3N50C FQD3N50CTF FQD3N50CTM FQU3N50C