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    onsemi FQD3N50CTF

    MOSFET N-CH 500V 2.5A DPAK
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    DigiKey FQD3N50CTF Reel 2,000
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    FQD3N50CTF Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD3N50CTF Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FQD3N50CTF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 2.5A DPAK Original PDF
    FQD3N50CTF_NL Fairchild Semiconductor 500V N-Channel Advanced QFET C-series Original PDF

    FQD3N50CTF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C FQU3N50CTU
    Text: QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C FQD3N50CTF FQD3N50CTM FQU3N50CTU PDF

    3n50c

    Abstract: No abstract text available
    Text: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQU3N50C FQU3N50CTU 3n50c PDF

    fqd3n50c

    Abstract: No abstract text available
    Text: N-Channel QFET MOSFET 500 V, 2.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		FQD3N50C FQU3N50C FQU3N50C PDF

    FQD3N50C

    Abstract: FQD3N50CTF FQD3N50CTM FQU3N50C
    Text: FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features Description • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 10 nC )


    Original     		FQD3N50C/FQU3N50C FQD3N50C/FQU3N50C FQD3N50C FQD3N50CTF FQD3N50CTM FQU3N50C PDF