DSA00385068.pdf by NEC

Partial File Text GENERAL PURPOSE GaAs MESFET FEATURES · LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figu
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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NE76100 NE76100M NE76100N

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