NE76100M Search Results

NE76100M Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE76100M		NEC	General purpose GaAs MESFET. IDSS 60 to 100 mA.		Original	PDF

NE76100M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 \|im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA	OCR Scan	NE7610o NE76100 NE76100 NE761QQN NE76100M 98B-3500« 24-Hour	PDF
Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_	OCR Scan	NE76100 IS12S21I NE76100 140nm NE76100N NE76100M	PDF
NE76100 Abstract: NE76100M NE76100N Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of	Original	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N	PDF
4435 ag Abstract: 5q 1265 rf Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz	OCR Scan	NE76100 E76100 NE76100 NE76100N NE76100M 4435 ag 5q 1265 rf	PDF
NE76100 Abstract: NE76100M NE76100N Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure	Original	NE76100 NE76100 NE76100N NE76100M 24-Hour NE76100M NE76100N	PDF