DSASW0093798.pdf by Chino-Excel Technology

Partial File Text CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.5 m @VGS = 10V. RDS(ON) = 7.0 m @VGS = 4.5V. Super high dense cell design f
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CEB83A3 CEB83A3G CEP83A3 CEP83A3G

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