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    CEP83A3

    Abstract: CEP83A3G CEB83A3G CEB83A3
    Text: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS ON = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP83A3G/CEB83A3G O-220 O-263 CEP83A3 CEP83A3G CEB83A3G CEB83A3