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DSA00384130.pdf
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Presented at PCIM Europe 2003 International Conference and Exhibition, May 20-22, Nuremberg, Germany Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET S
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Novel Trench Gate Structure Developments Set the Benchmark for Next Generation Power MOSFET Switchi
PCIM 177
Si4390DY
Si4392DY
Si7390DP
Si7392DP
trench
trench TEOS oxide layer
ultra low power mosfet fast switching
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