MARKING PA TR SOT-23
Abstract: ultra low igss pA
Text: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM3408
OT-23
TSM3408CX
MARKING PA TR SOT-23
ultra low igss pA
|
6968e
Abstract: TF6968E D002P 65a3
Text: TF6968E Dual N-Channel MOSFET – ESD Protected VDS=20V RDS ON , VGS # 9 P RDS(ON), VGS # 9 P RDS(ON), VGS # 9 P ID = 6.5A Features • Advanced trench process technology • Specially designed for Li-lon battery packs • Designed for battery switch applications
|
Original
|
PDF
|
TF6968E
6968E
FIG10-Maximum
FIG11-
100ms
6968e
TF6968E
D002P
65a3
|
fr 3910
Abstract: No abstract text available
Text: TSM190N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 75 4.2 @ VGS =10V 190 Block Diagram Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.)
|
Original
|
PDF
|
TSM190N08
O-220
160nC
300pF
TSM190N08CZ
50pcs
fr 3910
|
TSM3458
Abstract: sot26 pa N-Channel mosfet sot-26
Text: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●
|
Original
|
PDF
|
TSM3458
OT-26
TSM3458CX6
TSM3458
sot26 pa
N-Channel mosfet sot-26
|
DIODE B12
Abstract: B12 DIODE TSG15N120CN
Text: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
|
Original
|
PDF
|
TSG15N120CN
TSG15N120CN
30pcs
DIODE B12
B12 DIODE
|
mosfet 0835
Abstract: TSM05N03
Text: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM05N03
OT-223
TSM05N03CW
mosfet 0835
TSM05N03
|
Untitled
Abstract: No abstract text available
Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology
|
Original
|
PDF
|
TSM9435
TSM9435CS
|
Untitled
Abstract: No abstract text available
Text: CMS02 TOSHIBA Schottky Barrier Rectifier Trench Schottky Barrier Type CMS02 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.40 V max Average forward current: IF (AV) = 3.0 A
|
Original
|
PDF
|
CMS02
|
TOSHIBA RECTIFIER
Abstract: No abstract text available
Text: 30NWK2CZ47 TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type 30NWK2CZ47 Switching Mode Power Supply Application Converter & Chopper Application • Repetitive peak reverse voltage: VRRM = 100 V • Peak Forward Voltage: VFM = 0.83 V max
|
Original
|
PDF
|
30NWK2CZ47
12-10C1A
TOSHIBA RECTIFIER
|
Untitled
Abstract: No abstract text available
Text: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM2312
OT-23
TSM2312CX
|
TSM10N06
Abstract: No abstract text available
Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM10N06
O-252
TSM10N06CP
TSM10N06
|
TSM2307CX
Abstract: TSM2307CXRFG TSM2307 MARKING PA TR SOT-23 A1 SOT-23 MOSFET P-CHANNEL
Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 95 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM2307
OT-23
TSM2307CX
OT-23
TSM2307CXRFG
TSM2307
MARKING PA TR SOT-23
A1 SOT-23 MOSFET P-CHANNEL
|
MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
|
Untitled
Abstract: No abstract text available
Text: MA3008K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3008K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
|
Original
|
PDF
|
MA3008K10000000
MA3008K
D032610
OT-23
3000pcs
15000pcs
OT-23/25
|
|
|
Untitled
Abstract: No abstract text available
Text: MA3018M60000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3018M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
|
Original
|
PDF
|
MA3018M60000000
MA3018M6
PRPAK56
D112610
3000pcs
6000pcs
|
Untitled
Abstract: No abstract text available
Text: MA3010J10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3010J is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
|
Original
|
PDF
|
MA3010J10000000
MA3010J
D032610
OT-89)
OT-89
1000pcs
4000pcs
|
Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
|
Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
|
Original
|
PDF
|
Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
|
SI4431CDY
Abstract: No abstract text available
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
UP78
Abstract: Aaa SMD MARKING
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
|
Original
|
PDF
|
Si8401DB
Si3443DV
Si8401DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
Aaa SMD MARKING
|
VSB3200
Abstract: vsb320
Text: New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
|
Original
|
PDF
|
VSB3200
22-B106
2002/95/EC
2002/96/EC
DO-201AD
DO-201AD
2011/65/EU
2002/95/EC.
2011/65/EU.
VSB3200
vsb320
|
Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized
|
Original
|
PDF
|
Si4804BDY
2002/95/EC
Si4804BDY-T1-E3
Si4804BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated
|
Original
|
PDF
|
Si1034X
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
