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DSA0037579.pdf
by Fairchild Semiconductor
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UniFET TM FDB52N20 200V N-Channel MOSFET Features Description ยท 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced usi
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FDB52N20
FDB52N20TM
N-Channel MOSFET 200v