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    FDB52N20TM Search Results

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    FDB52N20TM Price and Stock

    onsemi FDB52N20TM

    MOSFET N-CH 200V 52A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDB52N20TM Cut Tape 1,710 1
    • 1 $3.23
    • 10 $2.103
    • 100 $3.23
    • 1000 $3.23
    • 10000 $3.23
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    FDB52N20TM Digi-Reel 1,710 1
    • 1 $3.23
    • 10 $2.103
    • 100 $3.23
    • 1000 $3.23
    • 10000 $3.23
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    FDB52N20TM Reel 1,600 800
    • 1 -
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    • 100 -
    • 1000 $1.12684
    • 10000 $1.05513
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    Avnet Americas FDB52N20TM Reel 9,600 16 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.11024
    • 10000 $0.99306
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    FDB52N20TM Reel 16 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.11024
    • 10000 $0.99306
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    Mouser Electronics FDB52N20TM 15,772
    • 1 $2.26
    • 10 $1.65
    • 100 $1.28
    • 1000 $1.21
    • 10000 $1.21
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    Verical FDB52N20TM 3,200 800
    • 1 -
    • 10 -
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    • 1000 $1.2118
    • 10000 $1.1753
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    FDB52N20TM 9 6
    • 1 -
    • 10 $1.1329
    • 100 $1.1329
    • 1000 $1.1329
    • 10000 $1.1329
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    Arrow Electronics FDB52N20TM Cut Strips 9 16 Weeks 1
    • 1 $1.1329
    • 10 $1.1329
    • 100 $1.1329
    • 1000 $1.1329
    • 10000 $1.1329
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    Newark FDB52N20TM Reel 9,600 800
    • 1 $1.42
    • 10 $1.42
    • 100 $1.42
    • 1000 $1.42
    • 10000 $1.27
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    FDB52N20TM Cut Tape 777 1
    • 1 $2.6
    • 10 $1.95
    • 100 $1.54
    • 1000 $1.49
    • 10000 $1.47
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    FDB52N20TM Reel 800
    • 1 $1.42
    • 10 $1.42
    • 100 $1.42
    • 1000 $1.42
    • 10000 $1.27
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    Future Electronics FDB52N20TM Reel 50,400 6 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $0.985
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    FDB52N20TM Reel 3,200 6 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $0.985
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    FDB52N20TM Reel 1,600 6 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.01
    • 10000 $0.96
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    FDB52N20TM Reel 16 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.04
    • 10000 $0.985
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    Onlinecomponents.com FDB52N20TM 3,200
    • 1 -
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    • 100 -
    • 1000 $1.029
    • 10000 $0.969
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    Bristol Electronics FDB52N20TM 34
    • 1 -
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    TME FDB52N20TM 657 1
    • 1 $2.02
    • 10 $1.8
    • 100 $1.5
    • 1000 $1.41
    • 10000 $1.41
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    Richardson RFPD FDB52N20TM 800
    • 1 -
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    • 1000 $1.06
    • 10000 $1.06
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    Avnet Asia FDB52N20TM 16 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.20586
    • 10000 $1.0421
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    Avnet Silica FDB52N20TM 17 Weeks 800
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    EBV Elektronik FDB52N20TM 18 Weeks 800
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    Master Electronics FDB52N20TM 3,200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.029
    • 10000 $0.969
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    Fairchild Semiconductor Corporation FDB52N20TM

    POWER FIELD-EFFECT TRANSISTOR, 52A I(D), 200V, 0.049OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FDB52N20TM 16
    • 1 $3.5367
    • 10 $2.5936
    • 100 $2.5936
    • 1000 $2.5936
    • 10000 $2.5936
    		Buy Now
    ComSIT USA FDB52N20TM 21
    • 1 -
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    Win Source Electronics FDB52N20TM 14,968
    • 1 -
    • 10 -
    • 100 $1.2977
    • 1000 $1.0544
    • 10000 $1.0544
    		Buy Now

    Others FDB52N20TM

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange FDB52N20TM 3,120
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    FDB52N20TM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB52N20TM Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    FDB52N20TM Fairchild Semiconductor 200V N-Channel MOSFET Original PDF

    FDB52N20TM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDB52N20 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    N-Channel MOSFET 200v

    Abstract: FDB52N20 FDB52N20TM
    Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB52N20 FDB52N20 N-Channel MOSFET 200v FDB52N20TM PDF

    FDB52N20

    Abstract: FDB52N20TM
    Text: UniFETTM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB52N20 FDB52N20 FDB52N20TM PDF

    General Semiconductor diode marking 49

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 500 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDB52N20 FDB52N20 General Semiconductor diode marking 49 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDB52N20 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB52N20 FDB52N20 PDF

    52N20

    Abstract: fdb fairchild FDB52N20
    Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB52N20 FDB52N20 FDB52N20TM 52N20 fdb fairchild PDF