DASF0035714.pdf by Infineon Technologies

Partial File Text BSC196N10NS G OptiMOSTM2 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal level 100 19.6
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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196n10ns BSC196 BSC196N10 BSC196N10NS BSC196N10NS G IEC61249-2-21

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