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    196N10NS Search Results

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    196N10NS Price and Stock

    Infineon Technologies AG BSC196N10NSGATMA1

    MOSFET N-CH 100V 8.5A/45A TDSON
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    DigiKey () BSC196N10NSGATMA1 Digi-Reel 4,996
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    BSC196N10NSGATMA1 Cut Tape 4,996 1
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    Avnet Americas () BSC196N10NSGATMA1 Bulk 111 Weeks 1
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    BSC196N10NSGATMA1 Reel 111 Weeks 5,000
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    Newark BSC196N10NSGATMA1 Bulk 3,572 1
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    Bristol Electronics BSC196N10NSGATMA1 2
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    Rochester Electronics BSC196N10NSGATMA1 45,616 1
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    Rutronik BSC196N10NSGATMA1 Reel 5,000 5,000
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    Chip One Stop BSC196N10NSGATMA1 Cut Tape 17,364 0 Weeks, 1 Days 5
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    EBV Elektronik BSC196N10NSGATMA1 143 Weeks 5,000
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    Vyrian BSC196N10NSGATMA1 14,172
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    Win Source Electronics BSC196N10NSGATMA1 10,000
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    Infineon Technologies AG BSC196N10NS G

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    Bristol Electronics BSC196N10NS G 459
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    196N10NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    196n10ns

    Contextual Info: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC196N10NS 196N10NS 196n10ns PDF

    196n10ns

    Abstract: BSC196N10NS G IEC61249-2-21 JESD22 BSC196N10NSG BSC196 BSC196N10 BSC196N10NS
    Contextual Info: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		BSC196N10NS IEC61249-2-21 196N10NS 100act 196n10ns BSC196N10NS G IEC61249-2-21 JESD22 BSC196N10NSG BSC196 BSC196N10 PDF

    196n10ns

    Abstract: JESD22 BSC196N10NS
    Contextual Info: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC196N10NS 196N10NS 45act 196n10ns JESD22 PDF

    196n10ns

    Contextual Info: 196N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 19.6 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		BSC196N10NS 196N10NS 196n10ns PDF