DASF0040291.pdf by Toshiba

Partial File Text HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm l HN2S01F is composed of 3 independent diodes. l Low reverse c
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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